Enhanced optical fiber Fabry-Perot acoustic sensor based on Mie resonant metamaterials

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Guoxin Cao , Zigeng Liu , Ang Li , Botao Liu , Dongdong An , Shengchun Liu
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Abstract

Advanced fiber Fabry-Perot (F-P) Acoustic sensor with anti-electromagnetic interference has been applied widely in some important monitoring fields. However, F-P acoustic sensors are limited by physical principles, and it is difficult to further improve the sensitivity and signal-to-noise ratio of the sensor. Here, a highly sensitive composite sensor, embedding a fiber F-P interferometer into a Mie resonant structure, is proposed for weak sound field detection. The customized Mie resonant metamaterials break through the sensitivity limit of F-P acoustic sensors, achieving local acoustic signal enhancement due to their high refractive index. The experimental and numerical results indicate a pressure gain of 27.60 dB and the sensor demonstrates a significant improvement in signal-to-noise ratio by 27.03 dB @1040 Hz. This technology offers a novel approach to overcoming the physical limitations of sensor detection by passively amplifying weak sound fields. The proposed sensor is suitable for applications in target azimuth identification and tracking applications.
基于Mie谐振超材料的增强光纤Fabry-Perot声传感器
先进的光纤法布里-珀罗(F-P)抗电磁干扰声传感器在一些重要的监测领域得到了广泛的应用。但是,F-P声传感器受物理原理的限制,难以进一步提高传感器的灵敏度和信噪比。本文提出了一种高灵敏度的复合传感器,将光纤F-P干涉仪嵌入到米氏谐振结构中,用于弱声场检测。定制的Mie谐振超材料突破了F-P声传感器的灵敏度极限,凭借其高折射率实现了局部声信号增强。实验和数值结果表明,该传感器的压力增益为27.60 dB,信噪比显著提高27.03 dB @1040 Hz。该技术提供了一种新的方法来克服传感器检测的物理限制,通过被动放大弱声场。该传感器适用于目标方位识别和跟踪应用。
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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