{"title":"A Picowatt CMOS Voltage Reference Using Independent TC and Output Level Calibrations","authors":"Yuyang Li;Ryan Caginalp;Inhee Lee","doi":"10.1109/TVLSI.2024.3508259","DOIUrl":null,"url":null,"abstract":"We propose a low-power voltage reference that enables independent adjustment of temperature sensitivity and output level. This design enhances the temperature sensitivity without impacting the output level distribution, in contrast to previous methods. The proposed circuit achieves this by integrating a separate control system that utilizes diode-connected pMOS transistors and an analog multiplexer for output level adjustment, along with biasing current control to improve the temperature sensitivity. In a 180-nm CMOS process, the prototype circuit generates a stable reference voltage averaging 192 mV, maintaining an accuracy of ±8.8 mV (<inline-formula> <tex-math>$\\pm 3\\sigma $ </tex-math></inline-formula>) from 0 °C to 75 °C across ten samples. In addition, it consumes only 35.8 pW at 0.6 V and 25 °C.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"33 5","pages":"1244-1254"},"PeriodicalIF":2.8000,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10777853/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
Abstract
We propose a low-power voltage reference that enables independent adjustment of temperature sensitivity and output level. This design enhances the temperature sensitivity without impacting the output level distribution, in contrast to previous methods. The proposed circuit achieves this by integrating a separate control system that utilizes diode-connected pMOS transistors and an analog multiplexer for output level adjustment, along with biasing current control to improve the temperature sensitivity. In a 180-nm CMOS process, the prototype circuit generates a stable reference voltage averaging 192 mV, maintaining an accuracy of ±8.8 mV ($\pm 3\sigma $ ) from 0 °C to 75 °C across ten samples. In addition, it consumes only 35.8 pW at 0.6 V and 25 °C.
期刊介绍:
The IEEE Transactions on VLSI Systems is published as a monthly journal under the co-sponsorship of the IEEE Circuits and Systems Society, the IEEE Computer Society, and the IEEE Solid-State Circuits Society.
Design and realization of microelectronic systems using VLSI/ULSI technologies require close collaboration among scientists and engineers in the fields of systems architecture, logic and circuit design, chips and wafer fabrication, packaging, testing and systems applications. Generation of specifications, design and verification must be performed at all abstraction levels, including the system, register-transfer, logic, circuit, transistor and process levels.
To address this critical area through a common forum, the IEEE Transactions on VLSI Systems have been founded. The editorial board, consisting of international experts, invites original papers which emphasize and merit the novel systems integration aspects of microelectronic systems including interactions among systems design and partitioning, logic and memory design, digital and analog circuit design, layout synthesis, CAD tools, chips and wafer fabrication, testing and packaging, and systems level qualification. Thus, the coverage of these Transactions will focus on VLSI/ULSI microelectronic systems integration.