Frequency and voltage dependent electrical and dielectric properties of Al/p-Si semiconductor structures with GO interlayer

Abstract

In this study, the electrical and dielectric properties of the Al/p-type Si semiconductor devices with graphene oxide interlayer at high frequencies (f ≥ 1 MHz) were investigated in detail using capacitance-voltage and conductance-voltage measurements. All measurements were taken at room temperature between 1 MHz and 5 MHz with 1 MHz intervals. There was a decrease in capacitance and conductivity values due to the increase in frequency and voltage. The decrease of capacitance and conductance curves with increasing frequency and voltage is due to the existence of interface states. Also, the interface state densities and series resistance values were obtained from capacitance-voltage and conductance-voltage measurements. The interface state densities and series resistance values at 1 MHz and 5 MHz were obtained as 5.07 × 10¹⁴-9.11 × 10¹³ cm⁻² eV⁻¹ and 540 Ω–283 Ω, respectively. Furthermore, dielectric characteristics as known dielectric constant, dielectric loss, dielectric loss tangent, ac/dc electrical conductivity, and electrical modulus were obtained from capacitance-voltage and conductance-voltage measurements. It was seen that while dielectric constant, dielectric loss, dielectric loss tangent, ac/dc electrical conductivity values decreased with increasing frequency, electrical modulus values increased with increasing frequency. Thus, the experimental results show that the electrical and dielectric properties of graphene oxide interlayered Al/p-Si semiconductor devices change depending on frequency and voltage even at high frequencies.