Efficient carrier transfer in the van der Waals straddling heterostructure

IF 3.8 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Xiangna Cong , Muhammad Najeeb Ullah Shah , Wenlong He
{"title":"Efficient carrier transfer in the van der Waals straddling heterostructure","authors":"Xiangna Cong ,&nbsp;Muhammad Najeeb Ullah Shah ,&nbsp;Wenlong He","doi":"10.1016/j.vacuum.2025.114364","DOIUrl":null,"url":null,"abstract":"<div><div>van der Waals (vdW) two-dimensional (2D) materials have the capability to fabricate heterostructures with a diverse range of adjustable bandgaps, which has created a multitude of possibilities in the field of optoelectronics applications. This study comprehensively analyses the SnS<sub>2</sub>/SnSe<sub>2</sub> heterostructure, uncovering a type-I band alignment that considerably enhances electron-hole recombination and energy transfer. First-principles density functional theory (DFT) analysis shows that the conduction band minimum (CBM) and valence band maximum (VBM) of SnSe<sub>2</sub> fall within the CBM and VBM of SnS<sub>2</sub>, thereby confirming the existence of type I band alignment. Photoluminescence (PL) spectroscopy reveals efficient energy transfer from SnS<sub>2</sub> to SnSe<sub>2</sub>, leading to enhanced PL intensity in SnSe<sub>2</sub>. These results propose that combining SnSe<sub>2</sub> and SnS<sub>2</sub> creates a heterostructure that facilitates stable and efficient energy transfer, placing it as a promising candidate for next-generation optoelectronics.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":"239 ","pages":"Article 114364"},"PeriodicalIF":3.8000,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Vacuum","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0042207X25003549","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

van der Waals (vdW) two-dimensional (2D) materials have the capability to fabricate heterostructures with a diverse range of adjustable bandgaps, which has created a multitude of possibilities in the field of optoelectronics applications. This study comprehensively analyses the SnS2/SnSe2 heterostructure, uncovering a type-I band alignment that considerably enhances electron-hole recombination and energy transfer. First-principles density functional theory (DFT) analysis shows that the conduction band minimum (CBM) and valence band maximum (VBM) of SnSe2 fall within the CBM and VBM of SnS2, thereby confirming the existence of type I band alignment. Photoluminescence (PL) spectroscopy reveals efficient energy transfer from SnS2 to SnSe2, leading to enhanced PL intensity in SnSe2. These results propose that combining SnSe2 and SnS2 creates a heterostructure that facilitates stable and efficient energy transfer, placing it as a promising candidate for next-generation optoelectronics.
范德华跨层异质结构中的高效载流子传输
范德华(vdW)二维(2D)材料具有制造具有各种可调带隙的异质结构的能力,这在光电子应用领域创造了多种可能性。本研究全面分析了SnS2/SnSe2的异质结构,发现了一种显著增强电子-空穴复合和能量转移的i型带对准。第一性原理密度泛函理论(DFT)分析表明,SnSe2的导带最小值(CBM)和价带最大值(VBM)落在SnS2的CBM和VBM之内,从而证实了I型带对准的存在。光致发光(PL)光谱揭示了SnS2到SnSe2的有效能量转移,导致SnSe2的光致发光强度增强。这些结果表明,结合SnSe2和SnS2可以产生一种异质结构,促进稳定和高效的能量转移,使其成为下一代光电子学的有希望的候选者。
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来源期刊
Vacuum
Vacuum 工程技术-材料科学:综合
CiteScore
6.80
自引率
17.50%
发文量
0
审稿时长
34 days
期刊介绍: Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences. A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below. The scope of the journal includes: 1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes). 2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis. 3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification. 4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.
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