Thermal activation of co-evaporated Ti, Zr and V-based binary and ternary getter alloy thin films: characterization by electrical measurements during hydrogenation

IF 3.8 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum Pub Date : 2025-04-22 DOI:10.1016/j.vacuum.2025.114354

Sylvain Lemettre , Charlotte Kutyla , Clément Bessouet , Laetitia Leroy , Alain Bosseboeuf , Thierry Sauvage , Olivier Wendling , Aurélien Bellamy , Stéphanie Escoubas , Christophe Guichet , Olivier Thomas , Johan Moulin

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引用次数: 0

Abstract

Ti, Zr, V, Zr-Ti, Zr-V, Ti-V and Ti-Zr-V alloy thin films were co-evaporated under UHV. Their composition was characterized by Rutherford Backscattering Spectrometry while their microstructure was characterized directly by X-ray diffraction and scanning electronic microscopy, and indirectly by electrical measurements. Depending on their composition, films are polycrystalline or amorphous and have a resistivity ranging from 60 to 160 μΩ cm. Amorphous films exhibit resistivities higher than 150 μΩ cm and negative TCRs, in accordance with Mooij rule. No bulk oxidation in ambient air was detected by electrical measurements over a period as long as 2 years. After deposition, films were activated during a thermal annealing at 5 °C/min up to 400 °C under 10⁻⁷ mbar vacuum or 10⁻³ mbar of H₂. An in situ sheet resistance monitoring of the films during annealing allowed to detect their hydrogenation and thus to compare their activation temperatures. Films with amorphous microstructure (ZrV, TiZrV) have lower activation temperatures than single element films and nanocrystalline ZrTi and TiV films. TiZrV has the lowest activation temperature, while single metal films have the highest activation temperatures.

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共蒸发Ti， Zr和v基二、三元吸气剂合金薄膜的热活化：加氢过程中的电测量表征

在特高压下共蒸发Ti、Zr、V、Zr-Ti、Zr-V、Ti-V和Ti-Zr-V合金薄膜。用卢瑟福后向散射光谱法对其组成进行了表征，用x射线衍射和扫描电镜对其微观结构进行了直接表征，并用电学测量间接表征。根据其组成，薄膜是多晶或非晶的，其电阻率范围为60至160 μΩ cm。非晶态薄膜的电阻率高于150 μΩ cm， tcr为负，符合Mooij规则。在长达2年的时间里，通过电气测量没有检测到环境空气中的大块氧化。沉积后，薄膜在10 - 7 mbar真空或10 - 3 mbar氢气条件下，在5°C/min至400°C的温度下被激活。在退火过程中对薄膜的原位薄片电阻监测允许检测它们的氢化，从而比较它们的活化温度。非晶结构薄膜（ZrV, TiZrV）的活化温度低于单元素薄膜和纳米晶ZrTi和TiV薄膜。TiZrV的活化温度最低，而单金属膜的活化温度最高。

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来源期刊

Vacuum 工程技术-材料科学：综合

CiteScore

6.80

自引率

17.50%

发文量

审稿时长

34 days

期刊介绍： Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences. A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below. The scope of the journal includes: 1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes). 2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis. 3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification. 4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.