Asymmetric self-biased magnetoelectric antenna pairs for low frequency communication system

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-04-23 DOI:10.1016/j.sna.2025.116623

Xi Chen , Xiaozhou Lü , Weiqiang Zhang , Chengming Xue , Xiangwei Zhu , Weimin Bao

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引用次数: 0

Abstract

Acoustically actuated compact low frequency (LF) magnetoelectric (ME) antennas offer the advantages of small size and high robustness against interference, which enable their use in portable LF underwater and underground communication applications. These antennas usually operate in an optimal DC-biased magnetic field (H_DC). However, permanent magnets or coils that generate the H_DC introduce additional electromagnetic fields and noise, which can affect the communication stability. Furthermore, the ME transmitter (T_X) antenna driven by high voltage exhibits strong nonlinear dynamic characteristics due to the strong delta-E effect. The ME receiver (R_X) antenna of the same structure operating in a weak magnetic field may create a frequency mismatch in the communication system, which further aggravates the bandwidth limitations of the ME antennas. In this work, an asymmetric LF communication system consisting of a self-biased ME T_X antenna and a self-biased cantilever ME R_X antenna is proposed, based on a magnetization-graded stacked structure. The experimental results demonstrate that the self-biased ME T_X antenna exhibits good radiating capability: its radiation performance improves by 142.4 % and its radiation distance increases by three times under a zero-bias magnetic field compared with the conventional ME T_X antenna. The communication performance of the proposed asymmetric self-biased ME antenna communication system is verified, and it is observed that the limit test distance is 1.7 times that of the symmetric communication system. In addition, the radiation performance of the self-biased ME T_X antenna decreases linearly with increasing temperature, demonstrating its potential application as a temperature sensor that can provide data support for temperature compensation in ME communications. This study is expected to provide novel solutions for the application of ME antennas in LF communications.

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低频通信系统的非对称自偏置磁电天线对

声致紧凑型低频（LF）磁电（ME）天线具有体积小、抗干扰能力强的优点，可用于便携式低频水下和地下通信应用。这些天线通常工作在最佳的dc偏置磁场（HDC）中。但是，产生HDC的永磁体或线圈会引入额外的电磁场和噪声，从而影响通信的稳定性。此外，高压驱动的ME发射机（TX）天线由于强烈的delta-E效应而表现出强烈的非线性动态特性。同一结构的ME接收机（RX）天线在弱磁场下工作，可能会在通信系统中产生频率失配，从而进一步加剧ME天线的带宽限制。本文提出了一种由自偏置ME TX天线和自偏置悬臂ME RX天线组成的非对称低频通信系统，该系统基于磁化梯度堆叠结构。实验结果表明，自偏置ME TX天线具有良好的辐射性能，在零偏置磁场下，其辐射性能比传统ME TX天线提高了142.4 %，辐射距离增加了3倍。验证了所提出的非对称自偏置ME天线通信系统的通信性能，观察到极限测试距离是对称通信系统的1.7倍。此外，自偏置ME TX天线的辐射性能随温度升高呈线性下降，表明其作为温度传感器的应用潜力，可以为ME通信中的温度补偿提供数据支持。本研究可望为ME天线在低频通信中的应用提供新的解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...