Xinghu Fu, Yihui Fu, Ju Tang, Zhexu Huang, Wa Jin, Guangwei Fu, Weihong Bi
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引用次数: 0
Abstract
A temperature sensor based on a dual Mach-Zehnder interferometer (MZI) in fiber ring laser is proposed and demonstrated. The dual MZI sensor is cascaded by single mode fiber (SMF) and Erbium-Ytterbium doped fiber (EYDF) to build an “SMF-EYDF-SMF-EYDF-SMF” structure to achieve simultaneous sensing and filtering. Experimental results show that when the length of the EYDF in the MZI filter is 5 cm, the laser spectrum exhibits mode-hopping at 110 °C. Additionally, red shifts occur in the temperature ranges from 30 °C to 110 °C and from 110 °C to 180 °C, with sensitivities of up to 45.6 pm/°C and 48.2 pm/°C, respectively. The laser has a very narrow Full Width at Half Maxima (∼0.5 nm) and an excellent signal-to-noise ratio (∼36 dB) with a small laser power fluctuation of 0.28 dB. This system has a large temperature tuning range (∼3.6 nm), which enables the integration of filtering and sensing. Due to the wavelength selection functionality possessed by lasers, it exhibits vast application potential in a multitude of fields, including the wavelength division multiplexing systems, optical network detection, and biomedicine.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...