Gold and copper nanoparticles assisted porous silicon for high UV photodetector sensitivity by localized surface plasmonic resonance phenomena

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-04-21 DOI:10.1016/j.sna.2025.116595

Raed A. Arishi , Abbas A.M. Alghareeb , Naser M. Ahmed , Siti Azrah Mohamad Samsuri

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引用次数: 0

Abstract

This study conducts the impacts of surface plasmonic resonance on ultraviolet (UV) photodetector performance that uses gold and copper nanoparticles integrated with porous silicon (PS) substrates, utilizing pulsed laser ablation in liquid (PLAL) approach and deposited over the PS substrates. The deposited samples were analyzed by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and ultraviolet-visible (UV-Vis) spectroscopy, conducting a thorough analysis of the optical characteristics, crystal structure, and morphological parameters. An assessment of the influence of plasmonic resonance on the photodetector performance was conducted utilizing a Keithley 2400 source analyzer. The current-voltage (I-V) characteristics showed Schottky features and a significant rise in current after exposure to UV light. Moreover, the current-time (I-t) characteristics showed enhancement photo-response upon analyzing the performance of the Ag/AuNPs/PS/Ag heterojunctions photodetector, which was found that it exhibited a remarkable sensitivity of 37467.57 %, an optical gain of 376, responsivity of 1.03 A/W, a detectivity of 1.72 × 10¹² Jones, and an equivalent noise power of 5.82 × 10⁻¹³ W, as well as a fast decay time of 20 ms at a bias voltage of 5 V under the UV-light of 370 nm. The findings highlight the substantial impact of plasmonic resonance in metal nanoparticles on the effectiveness of UV photodetectors, suggesting the potential for its utilization as a direct means to increase detector performance.

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金和铜纳米粒子通过局部表面等离子体共振现象辅助多孔硅获得高紫外光电探测器灵敏度

本研究利用金和铜纳米颗粒与多孔硅（PS）衬底结合，利用脉冲激光烧蚀（PLAL）方法沉积在多孔硅衬底上，研究了表面等离子体共振对紫外（UV）光电探测器性能的影响。通过x射线衍射（XRD）、场发射扫描电镜（FESEM）和紫外可见（UV-Vis）光谱对沉积样品进行了分析，对其光学特性、晶体结构和形态参数进行了深入分析。利用Keithley 2400源分析仪对等离子体共振对光电探测器性能的影响进行了评估。电流-电压（I-V）特性表现出肖特基特征，紫外照射后电流显著升高。此外,当前时间显示(它)特征增强photo-response在分析Ag)的性能/ AuNPs / PS / Ag)垂直光电探测器,这是发现,它表现出显著的敏感性为37467.57 %,376的光增益,响应率1.03 a / W,探测能力1.72 ×1012 琼斯,和一个等效噪声功率5.82 × 10−13 W,以及快速衰减时间20 女士的偏压5 V 370 海里的紫外线下。这些发现强调了金属纳米颗粒中的等离子体共振对紫外光电探测器有效性的重大影响，表明其作为提高探测器性能的直接手段的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...