{"title":"Study of chemical bond characteristics and microwave dielectric properties in Al2O3-substituted BaSi2O5 ceramics","authors":"Jing Yang, Yun Zhang, Xiaoning Li, Xinghua Zhu, Shihua Ding, Wenjie Zhou, Tianxiu Song","doi":"10.1016/j.jssc.2025.125384","DOIUrl":null,"url":null,"abstract":"<div><div>BaSi<sub>2-<em>x</em></sub>Al<sub><em>x</em></sub>O<sub>5-<em>x</em>/2</sub> (<em>x</em> = 0–0.05) low-dielectric ceramics were prepared by the solid-phase method. The effects of heterovalent ion substitution on the crystal structure and microwave dielectric properties were studied. X-ray (XRD) diffraction revealed that they formed single-phase solid solution with orthorhombic structure. Appropriate amount of Al<sup>3+</sup> doping decreased the sintering temperature from 1225 °C to 1150 °C. The change in dielectric constant (<em>ε</em><sub><em>r</em></sub>) resulted from the combined effects of the ionic nature of chemical bonds (<em>f</em><sub><em>i</em>ave</sub>) (internal factor) and the relative density (external factor). Si–O bonds contributed more significantly to the ceramic dielectric polarization. The increase in packing density and lattice energy (<em>U</em><sub><em>Total</em></sub>) enhanced the quality factor (<em>Q×f</em>), which nearly tripled compared with the undoped case. The resonant frequency temperature coefficient (<em>τ</em><sub><em>ƒ</em></sub>) was dominated by oxygen bond valence (<em>V</em><sub>o</sub>). When sintered at 1150 °C for 4 h, BaSi<sub>1.98</sub>Al<sub>0.02</sub>O<sub>4.99</sub> exhibited optimal performance: <em>ε</em><sub><em>r</em></sub> = 7.56, <em>Q×f</em> = 41,878 GHz, <em>τ</em><sub><em>f</em></sub> = −17.65 ppm/°C. This study offered a new approach to modifying BaSi<sub>2</sub>O<sub>5</sub> ceramics.</div></div>","PeriodicalId":378,"journal":{"name":"Journal of Solid State Chemistry","volume":"348 ","pages":"Article 125384"},"PeriodicalIF":3.2000,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Solid State Chemistry","FirstCategoryId":"92","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022459625002075","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
引用次数: 0
Abstract
BaSi2-xAlxO5-x/2 (x = 0–0.05) low-dielectric ceramics were prepared by the solid-phase method. The effects of heterovalent ion substitution on the crystal structure and microwave dielectric properties were studied. X-ray (XRD) diffraction revealed that they formed single-phase solid solution with orthorhombic structure. Appropriate amount of Al3+ doping decreased the sintering temperature from 1225 °C to 1150 °C. The change in dielectric constant (εr) resulted from the combined effects of the ionic nature of chemical bonds (fiave) (internal factor) and the relative density (external factor). Si–O bonds contributed more significantly to the ceramic dielectric polarization. The increase in packing density and lattice energy (UTotal) enhanced the quality factor (Q×f), which nearly tripled compared with the undoped case. The resonant frequency temperature coefficient (τƒ) was dominated by oxygen bond valence (Vo). When sintered at 1150 °C for 4 h, BaSi1.98Al0.02O4.99 exhibited optimal performance: εr = 7.56, Q×f = 41,878 GHz, τf = −17.65 ppm/°C. This study offered a new approach to modifying BaSi2O5 ceramics.
期刊介绍:
Covering major developments in the field of solid state chemistry and related areas such as ceramics and amorphous materials, the Journal of Solid State Chemistry features studies of chemical, structural, thermodynamic, electronic, magnetic, and optical properties and processes in solids.