{"title":"Fully solution-processed ferroelectric thin film transistor based on PZT and its application in neuromorphic computing","authors":"Yao Dong, Guangtan Miao, Wenlan Xiao, Chunyan You, Guoxia Liu, Fukai Shan","doi":"10.1063/5.0263232","DOIUrl":null,"url":null,"abstract":"As a promising alternative to conventional computing paradigms, the neuromorphic computing has been demonstrated by using various artificial synaptic devices. Due to the excellent capability for the conductance modulation, the ferroelectric thin film transistors (FeTFTs) have been shown as one of the promising candidates for artificial synaptic devices. In this work, the FeTFTs based on the lead zirconate titanate (PZT) thin films were integrated by the fully solution process. Prior to the integration of the FeTFTs, a lanthanum nickelate (LNO) thin film was prepared as the seed layer. The introduction of the LNO has been demonstrated to improve the crystallinity of the PZT thin films. It is confirmed that the channel conductance of the FeTFTs can be precisely modulated by adjusting the amplitude, duration, and number of the pulses. The potentiation and depression (P-D) characteristics of the FeTFTs have been demonstrated, and the P-D curve shows low nonlinearity and small cycle-to-cycle variations. Based on the P-D characteristics of the FeTFTs, an artificial neural network has been constructed for the pattern recognition, and a recognition accuracy of 93.1% has been achieved. These results suggest that the fully solution-processed FeTFTs based on PZT are the promising candidate for the artificial synaptic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"42 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0263232","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
As a promising alternative to conventional computing paradigms, the neuromorphic computing has been demonstrated by using various artificial synaptic devices. Due to the excellent capability for the conductance modulation, the ferroelectric thin film transistors (FeTFTs) have been shown as one of the promising candidates for artificial synaptic devices. In this work, the FeTFTs based on the lead zirconate titanate (PZT) thin films were integrated by the fully solution process. Prior to the integration of the FeTFTs, a lanthanum nickelate (LNO) thin film was prepared as the seed layer. The introduction of the LNO has been demonstrated to improve the crystallinity of the PZT thin films. It is confirmed that the channel conductance of the FeTFTs can be precisely modulated by adjusting the amplitude, duration, and number of the pulses. The potentiation and depression (P-D) characteristics of the FeTFTs have been demonstrated, and the P-D curve shows low nonlinearity and small cycle-to-cycle variations. Based on the P-D characteristics of the FeTFTs, an artificial neural network has been constructed for the pattern recognition, and a recognition accuracy of 93.1% has been achieved. These results suggest that the fully solution-processed FeTFTs based on PZT are the promising candidate for the artificial synaptic devices.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
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Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.