Fully solution-processed ferroelectric thin film transistor based on PZT and its application in neuromorphic computing

IF 3.5 2区 物理与天体物理 Q2 PHYSICS, APPLIED
Yao Dong, Guangtan Miao, Wenlan Xiao, Chunyan You, Guoxia Liu, Fukai Shan
{"title":"Fully solution-processed ferroelectric thin film transistor based on PZT and its application in neuromorphic computing","authors":"Yao Dong, Guangtan Miao, Wenlan Xiao, Chunyan You, Guoxia Liu, Fukai Shan","doi":"10.1063/5.0263232","DOIUrl":null,"url":null,"abstract":"As a promising alternative to conventional computing paradigms, the neuromorphic computing has been demonstrated by using various artificial synaptic devices. Due to the excellent capability for the conductance modulation, the ferroelectric thin film transistors (FeTFTs) have been shown as one of the promising candidates for artificial synaptic devices. In this work, the FeTFTs based on the lead zirconate titanate (PZT) thin films were integrated by the fully solution process. Prior to the integration of the FeTFTs, a lanthanum nickelate (LNO) thin film was prepared as the seed layer. The introduction of the LNO has been demonstrated to improve the crystallinity of the PZT thin films. It is confirmed that the channel conductance of the FeTFTs can be precisely modulated by adjusting the amplitude, duration, and number of the pulses. The potentiation and depression (P-D) characteristics of the FeTFTs have been demonstrated, and the P-D curve shows low nonlinearity and small cycle-to-cycle variations. Based on the P-D characteristics of the FeTFTs, an artificial neural network has been constructed for the pattern recognition, and a recognition accuracy of 93.1% has been achieved. These results suggest that the fully solution-processed FeTFTs based on PZT are the promising candidate for the artificial synaptic devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"42 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0263232","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

Abstract

As a promising alternative to conventional computing paradigms, the neuromorphic computing has been demonstrated by using various artificial synaptic devices. Due to the excellent capability for the conductance modulation, the ferroelectric thin film transistors (FeTFTs) have been shown as one of the promising candidates for artificial synaptic devices. In this work, the FeTFTs based on the lead zirconate titanate (PZT) thin films were integrated by the fully solution process. Prior to the integration of the FeTFTs, a lanthanum nickelate (LNO) thin film was prepared as the seed layer. The introduction of the LNO has been demonstrated to improve the crystallinity of the PZT thin films. It is confirmed that the channel conductance of the FeTFTs can be precisely modulated by adjusting the amplitude, duration, and number of the pulses. The potentiation and depression (P-D) characteristics of the FeTFTs have been demonstrated, and the P-D curve shows low nonlinearity and small cycle-to-cycle variations. Based on the P-D characteristics of the FeTFTs, an artificial neural network has been constructed for the pattern recognition, and a recognition accuracy of 93.1% has been achieved. These results suggest that the fully solution-processed FeTFTs based on PZT are the promising candidate for the artificial synaptic devices.
基于PZT的全溶液处理铁电薄膜晶体管及其在神经形态计算中的应用
神经形态计算作为传统计算范式的一种很有前途的替代方法,已经通过使用各种人工突触装置得到了证明。铁电薄膜晶体管由于其优异的电导调制性能,已被证明是人工突触器件的理想选择之一。本文研究了基于锆钛酸铅(PZT)薄膜的场效应晶体管的全固溶集成。在集成场效应晶体管之前,制备了镍酸镧(LNO)薄膜作为种子层。LNO的引入提高了PZT薄膜的结晶度。通过调整脉冲的幅度、持续时间和数量,可以精确地调制场效应管的沟道电导。实验证明了fet的增强和抑制(P-D)特性,P-D曲线具有较低的非线性和较小的周期变化。基于场效应晶体管的P-D特性,构建了用于模式识别的人工神经网络,识别准确率达到93.1%。这些结果表明,基于PZT的全溶液处理场效应管是人工突触器件的理想选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Applied Physics Letters
Applied Physics Letters 物理-物理:应用
CiteScore
6.40
自引率
10.00%
发文量
1821
审稿时长
1.6 months
期刊介绍: Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.
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