Electric-Field- and Stacking-Tuned Antiferromagnetic FeClF Bilayer: The Coexistence of Bipolar Magnetic Semiconductor and Anomalous Valley Hall Effect (Adv. Funct. Mater. 17/2025)

IF 18.5 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Advanced Functional Materials Pub Date : 2025-04-25 DOI:10.1002/adfm.202570097

Long Zhang, Yuqi Liu, Menghao Wu, Guoying Gao

引用次数: 0

Abstract

Ferrovalley

In article number 2417857, Guoying Gao and co-workers present the reversible electric field switch in bilayer FeClF for the appearance and disappearance of anomalous valley Hall effect in the cuboids, and the transition of bipolar magnetic semiconductor and antiferromagnetic semiconductor in the Tai Chi diagram, indicating the promising encoding, transport and storage of information through valley and spin.

Abstract Image

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电场和堆叠调谐反铁磁FeClF双层：双极磁性半导体和异常谷霍尔效应（ad泛函）的共存。板牙。17/2025)

在2417857号文章中，高国英等人展示了双层FeClF中可逆电场开关在长方体中异常谷霍尔效应的出现和消失，以及太极图中双极磁性半导体和反铁磁性半导体的转变，表明了通过谷和自旋进行信息编码、传输和存储的前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Advanced Functional Materials 工程技术-材料科学：综合

CiteScore

29.50

自引率

4.20%

发文量

2086

审稿时长

2.1 months

期刊介绍： Firmly established as a top-tier materials science journal, Advanced Functional Materials reports breakthrough research in all aspects of materials science, including nanotechnology, chemistry, physics, and biology every week. Advanced Functional Materials is known for its rapid and fair peer review, quality content, and high impact, making it the first choice of the international materials science community.