The Influence of Temperature on Charging Effects in Mask During Plasma Etching

Abstract

This research examines the correlation between temperature effects and surface charging problems on a silicon dioxide mask using simulation techniques. The findings of this study validate the significance of considering electron–solid interactions, especially when influenced by varying temperatures. The impacts of temperature changes on the spatial distributions of net charge deposition, electric potential, and electric field are examined. It was noted that the temperature rise leads to an increase in the concentration of positively charged holes near the surface of the mask, thereby diminishing the spatial dispersion of positive potential. This results in a less conspicuous alteration of the mask profile as the temperature increases. This investigation is anticipated to possess substantial significance and offer valuable insights for optimizing mask design.