Comprehensive Analysis of Recombination Characteristics Due to Illumination Under Elevated Temperature in Monocrystalline and Multicrystalline Wafers

IF 2.8 3区材料科学 Q3 CHEMISTRY, PHYSICAL

Silicon Pub Date : 2025-02-19 DOI:10.1007/s12633-025-03254-2

E. Resmi, K. P. Sreejith, Anil Kottantharayil

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引用次数: 0

Abstract

This work investigates the recombination characteristics of surface and bulk of industrial monocrystalline (c-Si) and multicrystalline (mc-Si) silicon wafers subjected to illuminated annealing at 75 °C. Variations in open circuit photoluminescence (PL) intensity and effective lifetime reveal that the degradation and regeneration behavior of the samples varies based on the bulk quality. The regeneration in PL intensity and effective minority carrier lifetime is relatively lower in mc-Si samples than in c-Si samples due to the high density of bulk defects. Further, the analysis of surface and bulk recombination characteristics reveals that the response of emitter surface and bulk are different during illuminated annealing. The bulk component dominates overall recombination characteristics and subsequently affects the performance parameters of the solar cells. It shows an initial degradation within 24 h followed by regeneration as light soaking duration increases. In contrast, light soaking beyond 24 h resulted in higher surface recombination in c-Si samples, indicating the possible formation of LeTID defects. However, no such degradation in the emitter surface is observed in mc-Si even after light soaking for 125 h, suggesting the absence of LeTID-related defect formation at the emitter surface. The observed trend in quantum efficiency (QE) agrees with the recombination parameters at the surface and within the bulk of the device.

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单晶与多晶片高温光照复合特性的综合分析

本研究研究了工业单晶（C - si）和多晶（mc-Si）硅片在75°C照明退火下的表面和本体的复合特性。开路光致发光（PL）强度和有效寿命的变化表明，样品的降解和再生行为随样品质量的变化而变化。由于体缺陷密度高，mc-Si样品的PL强度和有效少数载流子寿命相对低于c-Si样品。此外，对表面和体复合特性的分析表明，发光退火过程中发射极表面和体的响应是不同的。体组分主导了整体复合特性，并随后影响了太阳能电池的性能参数。随着光浸泡时间的延长，24 h内开始降解，随后再生。相比之下，光浸泡超过24 h， c-Si样品的表面复合率更高，表明可能形成了LeTID缺陷。然而，在mc-Si中，即使在光浸泡125 h后，发射器表面也没有观察到这种降解，这表明发射器表面没有形成letid相关的缺陷。观察到的量子效率（QE）趋势与表面和器件内部的复合参数一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

5.90

自引率

20.60%

发文量

685

审稿时长

>12 weeks

期刊介绍： The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.