Effect of gold doping via laser ablation on the structural, morphologic, and optical properties of CdS thin films for use in optoelectronic applications

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-24 DOI:10.1007/s10854-025-14811-1

Jamal Aziz, R. K. Fakher Alfahed, Faten Sh. Zainulabdeen

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Abstract

This study reports the preparation of cadmium sulfide (CdS) sol–gel doped with Gold (Au) nanoparticles synthesized using a laser ablation method and the fabrication of thin films via spin-coating. Gold nanoparticles were produced by irradiating an Au target with a Q-switched Nd: YAG laser (1064 nm) at pulse numbers ranging from 500 to 2500. X-ray diffraction analysis confirmed a hexagonal nanostructure for CdS, with an average crystal size of 11.57 nm in pure films. In comparison, Au doping resulted in crystal sizes between 6.6 and 9.3 nm, depending on pulse number. Atomic force microscopy (AFM) revealed reduced grain sizes from 72.44 nm in pure films to 25.8 nm in Au-doped films at 2000 pulses. Optical absorption spectra (300–800 nm) indicated a decrease in the band gap from 2.39 (pure films) to 2.33 eV (doped films with the highest pulse number). Nonlinear optical properties, evaluated using the Z-scan technique, showed variations in thermal refractive index (\({n}_{2}\)) and optical limiting (OL) behavior with increasing pulse number. These results highlight the tunable optical and structural properties of Au-doped CdS films, making them promising candidates for optoelectronic applications.

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激光烧蚀金掺杂对光电子用CdS薄膜结构、形貌和光学性能的影响

本文报道了用激光烧蚀法制备了硫化镉（cd）溶胶-凝胶掺杂金（Au）纳米粒子，并采用自旋镀膜法制备了硫化镉（cd）薄膜。用调q Nd: YAG激光器（1064 nm）在500 ～ 2500脉冲数范围内照射金靶，制备了金纳米颗粒。x射线衍射分析证实了CdS的六方纳米结构，在纯膜中平均晶体尺寸为11.57 nm。相比之下，Au掺杂导致晶体尺寸在6.6到9.3 nm之间，取决于脉冲数。原子力显微镜（AFM）显示，在2000脉冲下，纯膜的晶粒尺寸从72.44 nm减小到25.8 nm。光吸收光谱（300-800 nm）表明，带隙从2.39 eV（纯膜）减小到2.33 eV（脉冲数最高的掺杂膜）。非线性光学特性，用z扫描技术评估，显示出热折射率（\({n}_{2}\)）和光极限（OL）行为随脉冲数的增加而变化。这些结果突出了金掺杂CdS薄膜的可调谐光学和结构特性，使其成为光电应用的有希望的候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.