Top Cooling and Heat Transfer Dynamics in the Growth of Large Silicon Crystals Using the CZ Method

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2025-02-17 DOI:10.1007/s12633-025-03250-6
Yi-Jen Huang, Amir Reza Ansari Dezfoli
{"title":"Top Cooling and Heat Transfer Dynamics in the Growth of Large Silicon Crystals Using the CZ Method","authors":"Yi-Jen Huang,&nbsp;Amir Reza Ansari Dezfoli","doi":"10.1007/s12633-025-03250-6","DOIUrl":null,"url":null,"abstract":"<div><p>The increasing global demand for semiconductors, driven by advancements in technologies such as 5G, artificial intelligence, electric vehicles, and consumer electronics, has underscored the need to produce larger Czochralski (CZ) silicon wafers. Larger wafers enable higher chip yields per wafer, improving manufacturing efficiency and reducing costs. This study proposes a novel \"top cooling\" system to further increase the growth speed of large-diameter silicon wafers while maintaining high crystal quality. Using advanced simulation modeling, the study demonstrates the significant impact of top cooling on reducing temperature and crystal-front deflection, particularly for larger wafers. The findings highlight the potential of this cooling method to address silicon shortages by improving production efficiency without sacrificing material quality.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 5","pages":"1009 - 1017"},"PeriodicalIF":2.8000,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03250-6","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

The increasing global demand for semiconductors, driven by advancements in technologies such as 5G, artificial intelligence, electric vehicles, and consumer electronics, has underscored the need to produce larger Czochralski (CZ) silicon wafers. Larger wafers enable higher chip yields per wafer, improving manufacturing efficiency and reducing costs. This study proposes a novel "top cooling" system to further increase the growth speed of large-diameter silicon wafers while maintaining high crystal quality. Using advanced simulation modeling, the study demonstrates the significant impact of top cooling on reducing temperature and crystal-front deflection, particularly for larger wafers. The findings highlight the potential of this cooling method to address silicon shortages by improving production efficiency without sacrificing material quality.

用CZ法研究大硅晶体生长过程中的顶部冷却和传热动力学
在5G、人工智能、电动汽车和消费电子等技术进步的推动下,全球对半导体的需求不断增长,这凸显了生产更大的CZ硅片的必要性。更大的晶圆可以提高每片晶圆的芯片产量,提高制造效率并降低成本。本研究提出了一种新的“顶部冷却”系统,以进一步提高大直径硅片的生长速度,同时保持高晶体质量。利用先进的模拟模型,研究证明了顶部冷却对降低温度和晶体前偏转的显著影响,特别是对于较大的晶圆。研究结果强调了这种冷却方法的潜力,通过提高生产效率而不牺牲材料质量来解决硅短缺问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信