Effects of In nanoparticles on melting characteristics, microstructure, and shear strength of Sn58Bi solder

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-25 DOI:10.1007/s10854-025-14835-7

Lei Sun, Peng He, Shuye Zhang, Liang Zhang

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Abstract

The melting characteristics, microstructure, and shear strength of Sn58Bi solder with varying amounts of In nanoparticles were investigated. The results show that the peak temperature of Sn58Bi solder can be significantly reduced by adding In nanoparticles. Compared to the Sn58Bi solder, the peak temperature of Sn58Bi–1.0In solder decreased from 144.2 to 141.5 °C. With the addition of In nanoparticles, the microstructure of Sn58Bi solder joints was refined, and the growth of intermetallic compound (IMC) layer at the interface was effectively inhibited. When the content of In nanoparticles reached 1.0 wt%, the thickness of IMC layer was reduced from initial values of 6.2 μm (upper end) and 6.9 μm (lower end) to 4.9 μm and 5.1 μm, respectively. In addition, shear test results indicate that the Sn58Bi–1.0In solder joints exhibit optimal mechanical performance, achieving an average shear strength of 41.2 MPa, which represents a 17.4% enhancement compared to the Sn58Bi solder joints.

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In纳米颗粒对Sn58Bi钎料熔化特性、显微组织和抗剪强度的影响

研究了添加不同量的 In 纳米粒子的 Sn58Bi 焊料的熔化特性、微观结构和剪切强度。结果表明，添加 In 纳米粒子可显著降低 Sn58Bi 焊料的峰值温度。与 Sn58Bi 焊料相比，Sn58Bi-1.0In 焊料的峰值温度从 144.2 ℃ 降至 141.5 ℃。添加纳米铟粒子后，Sn58Bi 焊点的微观结构得到了细化，界面金属间化合物（IMC）层的生长得到了有效抑制。当 In 纳米粒子的含量达到 1.0 wt% 时，IMC 层的厚度分别从初始值 6.2 μm（上端）和 6.9 μm（下端）减小到 4.9 μm 和 5.1 μm。此外，剪切测试结果表明，Sn58Bi-1.0In 焊点具有最佳的机械性能，平均剪切强度达到 41.2 兆帕，与 Sn58Bi 焊点相比提高了 17.4%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.