Microwave Characterization of ZnMAl2O4 (M = Ti, Si, MgTi) Nanoceramics

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2025-02-24 DOI:10.1007/s12633-025-03260-4
Srilali Siragam
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引用次数: 0

Abstract

Various ZnAl2O4(Z)-based microwave dielectric ceramics-ZnTiAl2O4 (ZT), ZnSiAl2O4 (ZS), and ZnMgTiAl2O4 (ZMT)-were synthesized via the sol–gel method. Doping with Ti, Si, and Mg enhanced dielectric permittivity. XRD (X-ray diffraction) confirmed phase coexistence, while (Field emission scanning electron microscopy) FESEM showed increased particle size with sintering. The calculated crystal sizes of the three materials were 15 nm for ZT, 19 nm for ZS, and 18 nm for ZMT. Dielectric permittivity’s ranged from 12.8 to 14.75, with low dielectric losses (0.39–0.002 for ZT, 0.23–0.019 for ZS, 0.77–0.03 for ZMT). Raman and (Energy dispersive spectroscopy) EDS analyses validated structural and elemental features. Patch antennas using these ceramics achieved return losses of -29.08, -26.03, and -29.7 dB at 4.79, 3.61, and 8.82 GHz, demonstrating their potential for microwave applications.

Graphical Abstract

ZnMAl2O4 (M = Ti, Si, MgTi)纳米陶瓷的微波表征
采用溶胶-凝胶法制备了ZnAl2O4(Z)基微波介质陶瓷zntial2o4 (ZT)、ZnSiAl2O4 (ZS)和ZnMgTiAl2O4 (ZMT)。Ti、Si和Mg的掺杂增强了介电常数。XRD (x射线衍射)证实相共存,FESEM(场发射扫描电镜)显示烧结过程中颗粒尺寸增大。计算得到三种材料的晶体尺寸分别为ZT 15 nm、ZS 19 nm和ZMT 18 nm。介电常数范围为12.8 ~ 14.75,介电损耗低(ZT 0.39 ~ 0.002, ZS 0.23 ~ 0.019, ZMT 0.77 ~ 0.03)。拉曼(Raman)和能谱(EDS)分析验证了结构和元素特征。使用这些陶瓷的贴片天线在4.79、3.61和8.82 GHz时的回波损耗分别为-29.08、-26.03和-29.7 dB,显示了它们在微波应用中的潜力。图形抽象
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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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