Design and Analysis of Passivated n-Si Solar Cell Employing SiC Window Layer

IF 2.8 3区材料科学 Q3 CHEMISTRY, PHYSICAL

Silicon Pub Date : 2025-02-24 DOI:10.1007/s12633-025-03252-4

Sudipta Banerjee, Mukul K. Das, Tauseef Ahmed, Heranmoy Maity, Himadri Sekhar Das

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引用次数: 0

Abstract

A comprehensive device simulation model for the n-type Passivated Emitter and Rear Cell (n-PERC) has been developed using Silvaco TCAD for conducting in-depth investigations into the intricate relationships between various materials and device parameters and their consequent impact on the overall performance characteristics of the solar cell. Important research is conducted to optimize several design parameters, including the base doping, the thickness of the emitter, the rear side contact to non-contact ratio and others, after identifying the possibility of a notable increase in the device's performance. The incorporation of hydrogenated silicon carbide (SiC:H), a wide bandgap material, as the window layer engenders a substantial enhancement in the electrical performance of the device. Due to its wider bandgap, SiC provides enhanced transparency, allowing photons to effectively reach the bulk. Additionally, SiC forms an effective heterojunction with Si, ensuring favorable band alignment that facilitates efficient carrier separation and transport. The author's exclusive emphasis on silicon carbide (SiC) as window layer and coupled with the meticulous adjustment of various design parameters such as doping of emitter and bulk layers, thickness of emitter and ratio of contact to non-contact area at rear side demonstrates that a significant enhancement in efficiency reaching up to 25.67% can be realized.

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采用SiC窗层钝化n-Si太阳电池的设计与分析

利用 Silvaco TCAD 开发了 n 型钝化发射极和后部电池 (n-PERC) 的综合器件仿真模型，用于深入研究各种材料和器件参数之间的复杂关系及其对太阳能电池整体性能特征的影响。在确定了显著提高器件性能的可能性之后，对几个设计参数进行了重要的优化研究，包括基底掺杂、发射极厚度、后侧接触与非接触比等。采用氢化碳化硅（SiC:H）这种宽带隙材料作为窗口层，大大提高了器件的电气性能。由于碳化硅具有更宽的带隙，因此它的透明度更高，能让光子有效地进入元件。此外，碳化硅还能与硅形成有效的异质结，确保良好的带排列，从而促进有效的载流子分离和传输。作者特别强调将碳化硅（SiC）作为窗口层，并对各种设计参数（如发射器层和主体层的掺杂、发射器的厚度以及后侧接触区与非接触区的比例）进行了细致的调整，结果表明可以显著提高效率，最高可达 25.67%。

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来源期刊

Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

5.90

自引率

20.60%

发文量

685

审稿时长

>12 weeks

期刊介绍： The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.