Robust electrospun Si@PVA-MoS₂:NiO nanofibers heterojunction for enhanced self-powered broadband photodetection

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-04-22 DOI:10.1016/j.sna.2025.116616

Fatma Yıldırım , Hamed Fayaz Rouhi , Hossein Mahmoudi Chenari , Mehmet Biber , Şakir Aydoğan

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引用次数: 0

Abstract

The Si@PVA-MoS₂:NiO heterojunction photodetector (HJPD) was successfully fabricated by electrospinning PVA-MoS₂:NiO composite nanofibers (NFs) onto a n-Si. Structural and morphological analysis of nanofibers were performed by XRD and FESEM, respectively. It was found that the device gave rectification ratio as high as 5.91 × 0⁴ in the dark. A comprehensive current-voltage (I-V) analysis of the device was carried out, focusing on the influence of the white light intensity. From the white light intensity-dependent measurements, it was revealed that the photoresponse was higher at higher intensities due to the interfacial photogating effect. Besides, I-V measurements under 365, 395, 590 and 850 nm light sources were also analyzed in detail. The device was found to exhibit very high performance under all the light sources mentioned. Specifically, responsivity (R) and specific detectivity (D*) of 372 mA/W and 6.69 × 10¹¹ Jones, respectively, were attained at 590 nm and 8 mW/cm² for the optimum value (at −2.0 V). Furthermore, the highest EQE value was calculated as 117 (%) at −2.0 V, under 365 nm UV light, while highest ON/OFF ratio was obtained as 2.14 × 10⁴ for 590 nm, at zero bias. Besides, the device exhibits the normalized photocurrent to the dark current ratio (NPDR) of.40 × 10⁸ W⁻¹ (for zero bias), and the noise equivalent power (NEP) of 8.19 × 10^–14 WHz^−1/2 (for −2.0 V) under 590 nm yellow light. Furthermore, the Si@PVA-MoS₂:NiO NFs HJPD heterojunction photodetector has shown remarkable stability, offering long-term reliability for practical applications.

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鲁棒电纺Si@PVA-MoS₂：NiO纳米纤维异质结增强自供电宽带光探测

利用PVA-MoS2:NiO复合纳米纤维（NFs）在n-Si表面静电纺丝制备了Si@PVA-MoS2:NiO异质结光电探测器（HJPD）。利用XRD和FESEM对纳米纤维进行了结构和形态分析。结果表明，该装置在黑暗条件下的整流比高达5.91 × 04。对器件进行了全面的电流-电压（I-V）分析，重点研究了白光强度的影响。从白光强度相关的测量中，发现由于界面光门效应，在高强度下光响应更高。此外，还详细分析了365、395,590和850 nm光源下的I-V测量结果。发现该装置在上述所有光源下都表现出非常高的性能。具体来说，在590 nm和8 mW/cm2下（−2.0 V）的最佳响应度(R)和比检出率（D*）分别为372 mA/W和6.69 × 1011 Jones。此外，在365 nm紫外光下，在−2.0 V下，EQE值最高为117(%)，而在590 nm下，零偏置下，开/关比最高为2.14 × 104。此外，该器件具有归一化光电流与暗电流比（NPDR）。在590 nm黄光下，噪声等效功率（NEP）为8.19 × 10-14 WHz−1/2（适用于−2.0 V）。此外，Si@PVA-MoS2:NiO NFs HJPD异质结光电探测器表现出卓越的稳定性，为实际应用提供了长期的可靠性。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...