Modeling and suppression of magnetic noise in magnetic shielding devices considering anisotropy and hierarchical magnetic flux density

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-04-23 DOI:10.1016/j.sna.2025.116624

Wei Liu , Xueping Xu , Zhenkai Zhao , Weiwei Wu , Lei Wang

{"title":"Modeling and suppression of magnetic noise in magnetic shielding devices considering anisotropy and hierarchical magnetic flux density","authors":"Wei Liu , Xueping Xu , Zhenkai Zhao , Weiwei Wu , Lei Wang","doi":"10.1016/j.sna.2025.116624","DOIUrl":null,"url":null,"abstract":"<div><div>Magnetic shielding devices (MSDs) provide a near-zero magnetic environment crucial for magnetoencephalography (MEG) measurements. Accurate calculation and suppression of magnetic noise are essential for achieving high-sensitivity. Yet, existing magnetic noise calculation methods often overlook the anisotropy and uneven distribution of magnetic flux density in laminated nanocrystalline materials. This paper introduces a novel magnetic noise calculation model that accounts for anisotropy. Furthermore, a magnetic circuit network model is developed, yielding analytical expressions for magnetic flux density across various hierarchical levels. Building on this framework, the magnetic noise calculation model is refined with the incorporation of correction coefficients. The implementation of transverse magnetic annealing effectively reduces material losses, coercivity, and residual magnetization, while significantly enhancing permeability. Finally, the accuracy of the magnetic noise calculation method was experimentally validated, demonstrating a minimal error of just 2.39 % between the experimental and calculated values of magnetic noise. This advancement is crucial for enhancing the sensitivity of MEG measurements by effectively reducing magnetic noise in high-performance MSDs.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"390 ","pages":"Article 116624"},"PeriodicalIF":4.1000,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424725004303","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Magnetic shielding devices (MSDs) provide a near-zero magnetic environment crucial for magnetoencephalography (MEG) measurements. Accurate calculation and suppression of magnetic noise are essential for achieving high-sensitivity. Yet, existing magnetic noise calculation methods often overlook the anisotropy and uneven distribution of magnetic flux density in laminated nanocrystalline materials. This paper introduces a novel magnetic noise calculation model that accounts for anisotropy. Furthermore, a magnetic circuit network model is developed, yielding analytical expressions for magnetic flux density across various hierarchical levels. Building on this framework, the magnetic noise calculation model is refined with the incorporation of correction coefficients. The implementation of transverse magnetic annealing effectively reduces material losses, coercivity, and residual magnetization, while significantly enhancing permeability. Finally, the accuracy of the magnetic noise calculation method was experimentally validated, demonstrating a minimal error of just 2.39 % between the experimental and calculated values of magnetic noise. This advancement is crucial for enhancing the sensitivity of MEG measurements by effectively reducing magnetic noise in high-performance MSDs.

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考虑各向异性和分层磁通密度的磁屏蔽器件中磁噪声的建模与抑制

磁屏蔽装置（MSDs）为脑磁图（MEG）测量提供了一个至关重要的近零磁环境。精确的计算和抑制磁噪声是实现高灵敏度的关键。然而，现有的磁噪声计算方法往往忽略了层状纳米晶材料中磁通密度的各向异性和不均匀分布。本文介绍了一种考虑各向异性的磁噪声计算模型。此外，建立了磁路网络模型，给出了磁通密度在不同层次上的解析表达式。在此基础上，引入修正系数对磁噪声计算模型进行了细化。横向磁退火的实施有效地降低了材料的损耗、矫顽力和剩余磁化强度，同时显著提高了磁导率。最后，通过实验验证了磁噪声计算方法的准确性，结果表明，磁噪声的实验值与计算值之间的误差仅为2.39 %。这一进展对于通过有效降低高性能msd中的磁噪声来提高MEG测量的灵敏度至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...