Revealing the Role of Spacer Length and Methoxy Substitution of Dipodal Indolocarbazole‐based SAMs on the Performance of Inverted Perovskite Solar Cells

IF 13 2区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Small Pub Date : 2025-04-24 DOI:10.1002/smll.202500067

José Manuel Ramón, José G. Sánchez, Miriam Más‐Montoya, Wenhui Li, Eugenia Martínez‐Ferrero, Emilio Palomares, David Curiel

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Abstract

The application of self‐assembled molecules (SAMs) as selective charge transport layers in inverted perovskite solar cells (iPSCs) has attracted significant interest because of their ability to provide high‐efficiency and stable devices. In this work, four dipodal SAMs are reported based on π‐expanded indolo[2,3‐a]carbazole, incorporated as hole‐selective contacts in iPSCs. The presence of methoxy substituents and the spacer length in SAMs are modified to assess their influence on the device performance. For that, the ITO/SAM and ITO/SAM/PSCs interfaces are characterized in detail, including theoretical studies and analysis of the complete device performance. These results demonstrate the multifactorial effect that SAMs have on the growth of crystalline perovskite and the charge dynamics in the devices. The resulting iPSCs show power conversion efficiency (PCE) between 19.76% and 22.20% with fill factors exceeding 82% in all cases and good stability under continuous illumination. Notably, SAM combining unsubstituted indolocarbazole and longer pentyl spacer (5CPICZ) shows the highest PCE of 22.20%. In contrast, analogous SAMs with propyl spacers (3CPICZ) achiev a PCE of 22.01%. The experimental results reveal that the improved PCE reached with unsubstituted indolocarbazole SAMs is attributed to reduced charge recombination and longer carrier lifetime owing to effective perovskite surface passivation.

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揭示双足吲哚咔唑基SAMs的间隔长度和甲氧基取代对倒置钙钛矿太阳能电池性能的影响

自组装分子（SAM）作为选择性电荷传输层在倒置包晶太阳能电池（iPSC）中的应用引起了人们的极大兴趣，因为它们能够提供高效、稳定的器件。在这项工作中，报告了四种基于π-扩展的吲哚并[2,3-a]咔唑的二极 SAM，这些 SAM 用作 iPSC 中的空穴选择性接触。对 SAM 中甲氧基取代基的存在和间隔长度进行了修改，以评估它们对器件性能的影响。为此，对 ITO/SAM 和 ITO/SAM/PSCs 接口进行了详细表征，包括理论研究和完整器件性能分析。这些结果表明，SAM 对晶体包晶的生长和器件中的电荷动力学有多方面的影响。所制备的 iPSCs 的功率转换效率（PCE）介于 19.76% 和 22.20% 之间，填充因子在所有情况下均超过 82%，并且在连续光照下具有良好的稳定性。值得注意的是，结合了未取代的吲哚咔唑和较长的戊基间隔（5CPICZ）的 SAM 显示出 22.20% 的最高 PCE。相比之下，带有丙基间隔物的类似 SAM（3CPICZ）的 PCE 为 22.01%。实验结果表明，未取代的吲哚咔唑 SAMs 所达到的较高 PCE 可归因于有效的过氧化物表面钝化，从而减少了电荷重组，延长了载流子寿命。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Small 工程技术-材料科学：综合

CiteScore

17.70

自引率

3.80%

发文量

1830

审稿时长

2.1 months

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