Zinc doping-induced modulation of optical and nonlinear optical properties in MgO thin films deposited by dip coating

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2025-04-24 DOI:10.1007/s11082-025-08187-z

S. Abed, K. Waszkowska, H. Djaaboube, A. Bouabellou, S. Taboukhat, B. Sahraoui, K. Bouchouit

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Abstract

In this study, transparent dielectric magnesium oxide (MgO) thin films doped with varying concentrations of zinc (Zn) (0, 3, 5, and 7 at %) are successfully deposited on glass substrates using sol–gel dip coating technique. Magnesium acetate and zinc acetate serve as precursors, and the films were annealed at 500 °C for 6 h. The effect of Zn doping on the optical, morphological, and nonlinear optical (NLO) properties of the films is systematically investigated. Optical transmittance measurements reveal high transparency (> 80%) in the visible region, with transmittance decreasing as Zn concentration increases. The optical bandgap ranges from 3.94 to 4.04 eV, following a nonlinear trend due to Zn-induced lattice modifications. Surface morphology analysis shows uniform, homogeneous, and dense films, with increasing grain size and surface roughness at higher Zn doping levels. Third harmonic generation (THG) measurements using a Nd:YAG laser (1064 nm) demonstrate high-quality films with enhanced NLO properties. The third-order NLO susceptibility (χ⁽³⁾) is highest for undoped MgO (48.98 · 10⁻²² m² V⁻²), while Zn doping results in an initial reduction followed by improvement at higher concentrations. These findings highlight the potential of Zn-doped MgO thin films for optical and NLO applications.

Graphical Abstract

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锌掺杂对浸镀MgO薄膜光学和非线性光学特性的调制

在本研究中，采用溶胶-凝胶浸涂技术成功地在玻璃衬底上沉积了掺杂不同浓度锌（Zn）（0、3、5和7 at %）的透明介电氧化镁（MgO）薄膜。以乙酸镁和乙酸锌为前驱体，在500℃下退火6 h，系统地研究了锌掺杂对薄膜光学、形貌和非线性光学（NLO）性能的影响。透过率测量显示，在可见光区域具有较高的透明度（> 80%），透过率随Zn浓度的增加而降低。由于锌引起的晶格修饰，光学带隙在3.94 ~ 4.04 eV之间，呈现非线性变化趋势。表面形貌分析表明，锌掺杂水平越高，薄膜均匀致密，晶粒尺寸越大，表面粗糙度越大。使用Nd:YAG激光器（1064 nm）测量三次谐波（THG），得到了具有增强NLO性能的高质量薄膜。未掺杂的MgO的三阶NLO敏感性（χ(3)）最高（48.98·10−22 m2 V−2），而Zn掺杂导致初始降低，然后在更高浓度下提高。这些发现突出了锌掺杂MgO薄膜在光学和NLO应用方面的潜力。图形抽象

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.