An efficient surface-potential-based compact model for dynamically depleted silicon-on-insulator MOSFETs

Abstract

This work proposes and develops a surface-potential-based compact model for dynamically depleted (DD) silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs). The surface potential model is obtained by incorporating an optimized initial guess function, together with an iterative approach. Then the electric current and capacitance models are developed based on the surface potential. The compact model results are compared with both technology computer-aided design simulations and measured data from industry, good agreements are observed. The developed model can capture the hump effect in gate capacitance-voltage curves during the transition from partial depletion to full depletion regimes. Furthermore, the model can ensure symmetry and differentiability, both of which are necessary for stable convergence in circuit-level simulations. It is noted that, the model can achieve balance between accuracy and computation efficiency in the simulations. As it can describe the electric characteristics of the DD SOI MOSFETs, the model is useful for the circuit design.