Ultrathin Bi2O2Se/Si Heterojunction Photodetector with Tunneling Oxide Passivation for Enhanced Optoelectronic Performance

IF 8.3 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

ACS Applied Materials & Interfaces Pub Date : 2025-04-23 DOI:10.1021/acsami.5c03477

Tzu-Pu Hung, Wei-Han Chen, Yi-Jyun Chen, Yu-Hao Tu, Zhi-Hao Huang, Yu-Lun Chueh, Chao-Hui Yeh, Chien-Wei Chen, Yang-Yu Jhang, Ying-Hao Chu, Cheng-Ying Chen

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引用次数: 0

Abstract

Two-dimensional (2D) materials have garnered significant attention for next-generation optoelectronic devices due to their exceptional physical properties. This study introduces a high-performance ultrathin Bi₂O₂Se/Si heterojunction photodetector with tunneling oxide passivation, fabricated using a transfer-free pulsed laser deposition method. The Bi₂O₂Se layer exhibits strong air stability and compatibility for practical applications. By incorporating a thin SiO₂ tunneling layer, the heterostructure achieves a low dark current (∼22.3 nA/cm²), a high on/off ratio (∼8 × 10⁶), and a responsivity of 23.0 A/W. Compared to traditional CdS/Si devices, this photodetector demonstrates superior performance, including faster response time and higher stability. These findings underscore the potential of Bi₂O₂Se/Si heterostructures for advanced photonic and optoelectronic applications.

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隧道氧化钝化超薄Bi2O2Se/Si异质结光电探测器提高光电性能

二维（2D）材料因其优异的物理性质，在下一代光电器件中备受关注。本研究介绍了一种采用无转移脉冲激光沉积方法制造的具有隧道氧化物钝化的高性能超薄 Bi2O2Se/Si 异质结光电探测器。Bi2O2Se 层具有很强的空气稳定性和实际应用兼容性。通过加入薄薄的二氧化硅隧道层，该异质结构实现了低暗电流（∼22.3 nA/cm2）、高开关比（∼8 × 106）和 23.0 A/W 的响应率。与传统的 CdS/Si 器件相比，这种光电探测器表现出更优越的性能，包括更快的响应时间和更高的稳定性。这些发现凸显了 Bi2O2Se/Si 异质结构在先进光子和光电应用方面的潜力。

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来源期刊

ACS Applied Materials & Interfaces 工程技术-材料科学：综合

CiteScore

16.00

自引率

6.30%

发文量

4978

审稿时长

1.8 months

期刊介绍： ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.