S. S. Beenaben, Radha Sankararajan, Mythili Kumaresan
{"title":"Investigation on electrochemical sensing behavior of hydrogen peroxide using tin dioxide (SnO2) nanoparticles","authors":"S. S. Beenaben, Radha Sankararajan, Mythili Kumaresan","doi":"10.1007/s10854-025-14754-7","DOIUrl":null,"url":null,"abstract":"<div><p>Hydrogen peroxide (H<sub>2</sub>O<sub>2</sub>) plays a vital role in various aspects of daily life, such as food, health, and the environment. Foods containing excessive quantities of H<sub>2</sub>O<sub>2</sub> residue may have harmful impacts on human health. In this work, tin dioxide nanoparticles (SnO<sub>2</sub>NPs) were synthesized by a hydrothermal method and subsequently characterized using an X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), Field emission scanning electron microscope (FESEM), and Energy-dispersive X-ray analysis (EDAX). An electrochemical sensor for analyzing hydrogen peroxide (H<sub>2</sub>O<sub>2</sub>) was developed by immobilizing tin dioxide nanoparticles onto a graphite electrode (SnO<sub>2</sub>/GE). The electrocatalytic behavior of the developed electrochemical sensor was studied using cyclic voltammetry (CV) and differential pulse voltammetry (DPV). The results indicated that the SnO<sub>2</sub>/GE exhibits notable electrocatalytic oxidation and reduction capabilities for detecting and quantifying H<sub>2</sub>O<sub>2</sub>. The DPV technique determined parameters included linear range of 1–5 μM, a detection limit is 0.196 μM, and a qualification limit is 2.38 μM for the reduction peak with correlation coefficient <i>R</i><sup>2</sup> is 0.98. The stability of the sensor is measured for five days and has 98.7% of stability. The highest current is measured at pH 7. The developed sensor was successfully used to detect trace levels of H<sub>2</sub>O<sub>2</sub>.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14754-7","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Hydrogen peroxide (H2O2) plays a vital role in various aspects of daily life, such as food, health, and the environment. Foods containing excessive quantities of H2O2 residue may have harmful impacts on human health. In this work, tin dioxide nanoparticles (SnO2NPs) were synthesized by a hydrothermal method and subsequently characterized using an X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), Field emission scanning electron microscope (FESEM), and Energy-dispersive X-ray analysis (EDAX). An electrochemical sensor for analyzing hydrogen peroxide (H2O2) was developed by immobilizing tin dioxide nanoparticles onto a graphite electrode (SnO2/GE). The electrocatalytic behavior of the developed electrochemical sensor was studied using cyclic voltammetry (CV) and differential pulse voltammetry (DPV). The results indicated that the SnO2/GE exhibits notable electrocatalytic oxidation and reduction capabilities for detecting and quantifying H2O2. The DPV technique determined parameters included linear range of 1–5 μM, a detection limit is 0.196 μM, and a qualification limit is 2.38 μM for the reduction peak with correlation coefficient R2 is 0.98. The stability of the sensor is measured for five days and has 98.7% of stability. The highest current is measured at pH 7. The developed sensor was successfully used to detect trace levels of H2O2.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.