Scalable growth and transfer of large-area MoS2 film on IDE structures for photo-detector application

Abstract

A large-area centimeter-scale (2 cm × 1 cm) high-quality continuous MoS₂ film was grown on a SiO₂/Si substrate via the Chemical Vapor Deposition (CVD) technique to ensure the scalability and uniformity of the MoS₂ film across a large area, rendering it suitable for wafer-scale applications. We further establish the transfer of MoS₂ film from the grown substrate (SiO₂/Si) to Interdigitated Electrodes (IDE) structures fabricated on GaAs substrate via a wet etching process utilizing Hydrogen Fluoride (HF) solution, effectively removing the MoS₂ layer from SiO₂/Si substrate within 2–3 min, while preserving the structural integrity and quality of the MoS₂ film. Characterization studies involving Raman analysis, Photoluminescence (PL) mapping, SEM imaging, and optoelectronics measurements confirm the high quality and integrity of the transferred MoS₂ film onto IDE structures fabricated on GaAs substrate for photodetection application. Optoelectronic measurements revealed a significant responsivity enhancement from 2.13 to 26.4 mA/W at a 20 V bias under 780 nm laser illuminations (5 mW), due to the incorporation of gold nanoparticles between the IDE fingers by employing RF sputtering. Thus, integrating nanoparticles in the active region of optoelectronic devices can markedly enhance the optical efficiency of 2D material-based optoelectronic systems. Overall, this CVD technique presents a viable approach for the scalable production of large-area MoS₂ films and their transfer onto fabricated structures, opening avenues for the integration of MoS₂ films into advanced technological devices and systems, particularly in micro and Nano-electromechanical systems.