Study on the relaxation behavior and energy storage properties of (Bi0.88La0.12)ScO3-modified Bi0.5Na0.46Li0.04TiO3 ceramics

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-22 DOI:10.1007/s10854-025-14746-7

Zhongrui Du, Qiyi Yin, Hui Zhang, Hao Zu, Chen Chen, Fan Si, Fei Lin, Xiangyu Zhu, Yulin Zhang, Kunhong Hu, Lu Li, Fulin Zhang, Yunhui Meng

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引用次数: 0

Abstract

Excellent power density, quick charge/discharge rates, and great energy storage capacity of lead-free dielectric ceramic capacitors have drawn a lot of interest. In this work, doping with Bi_0.88La_0.12ScO₃ (BLS) enhanced the relaxation behavior and energy storage characteristics of Bi_0.5Na_0.46Li_0.04TiO₃ (BNLT)-based ceramics. Grain size was greatly lowered from 3.4 to 1.79 μm and XRD and SEM studies revealed that the doped La³⁺ and Sc³⁺ ions were effectively integrated into the matrix lattice. The relaxable index of the ceramics reached 1.92 as the BLS doping content rose; likewise, the recovered energy density (W_rec) and energy efficiency (η) improved. Excellent energy storage properties (W_rec = 5.62 J/cm³, η = 81%) were shown by the BNLT-0.09BLS ceramic under a field strength of 350 kV/cm. In the temperature range of 30 to 200 °C and frequency range of 5 to 150 Hz, it also displayed good frequency stability and thermal stability. Moreover, charge/discharge experiments showed that the ceramic has an ultra-fast discharge rate (t_0.9 = 0.18 μs). These outstanding comprehensive characteristics of BNLT-0.09BLS ceramics provide a valuable source of reference for the design of effective dielectric capacitors.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.