Luminescence improvement of Ce3+-doped Lu2CaMg2Si3O12 orange phosphor for WLED based on Ca vacancy

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yingkai Fu, Yubo Feng, Kaiyang Li, Yuhan Yan, Runtao Chen, Yuwen Peng, Weijie Li, Yang Zheng, Xu Qian, Jianying Ding, Quan Liu
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引用次数: 0

Abstract

Phosphors for white light emitting diode (WLED) have kept catching the researchers’ attention. Herein, Ce3+-activated garnet Lu2CaMg2Si3O12 orange phosphor was synthesized and Ca content was decreased to create Ca vacancy into the lattice to further improve the luminescence properties. XRD patterns and Rietveld refinement were executed to investigate the effect of Ca vacancy on the lattice structure. The synthesized phosphors exhibited broad excitation band in blue region and broad emission band ranging from 530 to 750 nm. Via creating Ca vacancy into the lattice both the emission and the thermal stability of Ce3+-doped Lu2CaMg2Si3O12 were improved. Quantum efficiency of the optimized sample Lu2Ce0.06Ca0.95Mg2Si3O12 reaches 84.7%. Optimized Lu1.94Ce0.06Ca0.95Mg2Si3O12 was mixed with the cyan phosphor Ca3Sc2Si3O12:Ce3+ and spread on the blue chip to fabricate WLED device, showing high color rendering index 86.6 and correlated color temperature 4404 K. This work provides a simple strategy to improve the luminescence property of Lu2CaMg2Si3O12:Ce3+ and a thermally stable orange phosphor for WLED.

基于 Ca 空位改善用于 WLED 的掺有 Ce3+ 的 Lu2CaMg2Si3O12 橙荧光粉的发光性能
白光发光二极管(WLED)的荧光粉一直受到研究人员的关注。本文合成了Ce3+活化的石榴石Lu2CaMg2Si3O12橙色荧光粉,降低了钙含量,在晶格中形成钙空位,进一步提高了发光性能。采用XRD和Rietveld细化方法研究了Ca空位对晶格结构的影响。合成的荧光粉在530 ~ 750 nm范围内具有较宽的蓝色激发带和较宽的发射带。通过在晶格中形成Ca空位,Ce3+掺杂的Lu2CaMg2Si3O12的发射性能和热稳定性都得到了改善。优化后的样品Lu2Ce0.06Ca0.95Mg2Si3O12的量子效率达到84.7%。将优化后的Lu1.94Ce0.06Ca0.95Mg2Si3O12与青色荧光粉Ca3Sc2Si3O12:Ce3+混合,涂覆在蓝芯片上制备WLED器件,显色指数86.6,相关色温4404 K。本工作为改善Lu2CaMg2Si3O12:Ce3+的发光性能和WLED的热稳定橙色荧光粉提供了一种简单的策略。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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