Yingkai Fu, Yubo Feng, Kaiyang Li, Yuhan Yan, Runtao Chen, Yuwen Peng, Weijie Li, Yang Zheng, Xu Qian, Jianying Ding, Quan Liu
{"title":"Luminescence improvement of Ce3+-doped Lu2CaMg2Si3O12 orange phosphor for WLED based on Ca vacancy","authors":"Yingkai Fu, Yubo Feng, Kaiyang Li, Yuhan Yan, Runtao Chen, Yuwen Peng, Weijie Li, Yang Zheng, Xu Qian, Jianying Ding, Quan Liu","doi":"10.1007/s10854-025-14758-3","DOIUrl":null,"url":null,"abstract":"<div><p>Phosphors for white light emitting diode (WLED) have kept catching the researchers’ attention. Herein, Ce<sup>3+</sup>-activated garnet Lu<sub>2</sub>CaMg<sub>2</sub>Si<sub>3</sub>O<sub>12</sub> orange phosphor was synthesized and Ca content was decreased to create Ca vacancy into the lattice to further improve the luminescence properties. XRD patterns and Rietveld refinement were executed to investigate the effect of Ca vacancy on the lattice structure. The synthesized phosphors exhibited broad excitation band in blue region and broad emission band ranging from 530 to 750 nm. Via creating Ca vacancy into the lattice both the emission and the thermal stability of Ce<sup>3+</sup>-doped Lu<sub>2</sub>CaMg<sub>2</sub>Si<sub>3</sub>O<sub>12</sub> were improved. Quantum efficiency of the optimized sample Lu<sub>2</sub>Ce<sub>0.06</sub>Ca<sub>0.95</sub>Mg<sub>2</sub>Si<sub>3</sub>O<sub>12</sub> reaches 84.7%. Optimized Lu<sub>1.94</sub>Ce<sub>0.06</sub>Ca<sub>0.95</sub>Mg<sub>2</sub>Si<sub>3</sub>O<sub>12</sub> was mixed with the cyan phosphor Ca<sub>3</sub>Sc<sub>2</sub>Si<sub>3</sub>O<sub>12</sub>:Ce<sup>3+</sup> and spread on the blue chip to fabricate WLED device, showing high color rendering index 86.6 and correlated color temperature 4404 K. This work provides a simple strategy to improve the luminescence property of Lu<sub>2</sub>CaMg<sub>2</sub>Si<sub>3</sub>O<sub>12</sub>:Ce<sup>3+</sup> and a thermally stable orange phosphor for WLED.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14758-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Phosphors for white light emitting diode (WLED) have kept catching the researchers’ attention. Herein, Ce3+-activated garnet Lu2CaMg2Si3O12 orange phosphor was synthesized and Ca content was decreased to create Ca vacancy into the lattice to further improve the luminescence properties. XRD patterns and Rietveld refinement were executed to investigate the effect of Ca vacancy on the lattice structure. The synthesized phosphors exhibited broad excitation band in blue region and broad emission band ranging from 530 to 750 nm. Via creating Ca vacancy into the lattice both the emission and the thermal stability of Ce3+-doped Lu2CaMg2Si3O12 were improved. Quantum efficiency of the optimized sample Lu2Ce0.06Ca0.95Mg2Si3O12 reaches 84.7%. Optimized Lu1.94Ce0.06Ca0.95Mg2Si3O12 was mixed with the cyan phosphor Ca3Sc2Si3O12:Ce3+ and spread on the blue chip to fabricate WLED device, showing high color rendering index 86.6 and correlated color temperature 4404 K. This work provides a simple strategy to improve the luminescence property of Lu2CaMg2Si3O12:Ce3+ and a thermally stable orange phosphor for WLED.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.