L. W. El Khatib, A. M. Abdallah, M. Noun, Nour El Ghouch, G. O. Younes, R. Awad
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引用次数: 0
Abstract
Ni0.6Zn0.2Sb0.2Fe2O4 capped with different concentrations of dextrose monohydrate (0–0.35 M) was synthesized using the co-precipitation method. The structural properties and the purity of Ni0.6Zn0.2Sb0.2Fe2O4 were determined using X-ray powder diffraction. Two phases were obtained, a major phase assuring the formation of Ni0.6Zn0.2Sb0.2Fe2O4 and a minor phase indicating the formation of hematite (α-Fe2O3). The addition of a capping agent caused an increase in the major phase percentage and a decrease in the minor phase percentage with the D35 sample (0.35 M) having the highest Ni0.6Zn0.2Sb0.2Fe2O4 percentage (99.48%) and the lowest hematite percentage (0.52%). The transmission electron microscopy analysis showed that Ni0.6Zn0.2Sb0.2Fe2O4 has a spherical shape and a particle size between 15.258 and 16.773 nm. The selected area electron diffraction confirmed the polycrystalline nature of Ni0.6Zn0.2Sb0.2Fe2O4 in concentric rings. Energy-dispersive X-ray analysis proved the purity of Ni0.6Zn0.2Sb0.2Fe2O4 and the atomic percentage obtained was compatible with the theoretical one. X-ray photoelectron spectroscopy tested the oxidation state (Ni2+, Zn2+, Sb3+, Fe3+, and O2−) and the elemental composition of the synthesized nanoparticles. Fourier transform infrared spectroscopy confirmed the formation of the spinel structure through the presence of tetrahedral and octahedral metal–oxygen bonds. Raman spectroscopic analysis investigated the presence of two A1g and two F2g modes. The increase in particle size accompanied a rise in ferromagnetic phase contribution and a decrease in superparamagnetic phase contribution as investigated by the vibrating sample magnetometer. Moreover, the D20 sample (0.2 M) registered the highest saturation magnetization value of 40.813 emu.g−1.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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