Structure and optical properties of CdTe thin films obtained via discrete vacuum thermal evaporation

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
M. S. Tivanov, V. A. Gevorgyan, A. A. Zgliui, K. P. Haroyan, V. F. Gremenok, D. V. Zhyhulin, M. Dong, M. Khalid Hossain, M. I. Sayyed, T. I. Zubar, D. I. Tishkevich, A. V. Trukhanov
{"title":"Structure and optical properties of CdTe thin films obtained via discrete vacuum thermal evaporation","authors":"M. S. Tivanov,&nbsp;V. A. Gevorgyan,&nbsp;A. A. Zgliui,&nbsp;K. P. Haroyan,&nbsp;V. F. Gremenok,&nbsp;D. V. Zhyhulin,&nbsp;M. Dong,&nbsp;M. Khalid Hossain,&nbsp;M. I. Sayyed,&nbsp;T. I. Zubar,&nbsp;D. I. Tishkevich,&nbsp;A. V. Trukhanov","doi":"10.1007/s10854-025-14769-0","DOIUrl":null,"url":null,"abstract":"<div><p>CdTe films were obtained via discrete vacuum thermal evaporation (DVTE) with CdCl<sub>2</sub> treatment and annealing in an air atmosphere. The CdTe samples were investigated using several techniques: energy-dispersive X-ray spectroscopy, scanning electron microscopy, atomic-force microscopy, grazing incidence X-ray diffraction, and Raman analysis. It has been observed that the samples of CdTe films have a cubic structure with predominant orientation (111), a smooth surface without pores or cracks, and the stoichiometric Cd/Te ratio approaches 1. The band gap width is 1.51 eV, and the Urbach energy is in the range of 13–25 meV, increasing for CdTe thin films synthesized with CdCl<sub>2</sub>. It has been shown that films based on CdTe fabricated via DVTE with CdCl<sub>2</sub> treatment and annealing in an air atmosphere at 400 °C predominantly crystallize in the cubic structure of CdTe, have good structural and topographic parameters, are low defectless, have an optimal band gap value, and can be applied as a perspective material for high-efficiency solar cell creation.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14769-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

CdTe films were obtained via discrete vacuum thermal evaporation (DVTE) with CdCl2 treatment and annealing in an air atmosphere. The CdTe samples were investigated using several techniques: energy-dispersive X-ray spectroscopy, scanning electron microscopy, atomic-force microscopy, grazing incidence X-ray diffraction, and Raman analysis. It has been observed that the samples of CdTe films have a cubic structure with predominant orientation (111), a smooth surface without pores or cracks, and the stoichiometric Cd/Te ratio approaches 1. The band gap width is 1.51 eV, and the Urbach energy is in the range of 13–25 meV, increasing for CdTe thin films synthesized with CdCl2. It has been shown that films based on CdTe fabricated via DVTE with CdCl2 treatment and annealing in an air atmosphere at 400 °C predominantly crystallize in the cubic structure of CdTe, have good structural and topographic parameters, are low defectless, have an optimal band gap value, and can be applied as a perspective material for high-efficiency solar cell creation.

离散真空热蒸发法制备碲化镉薄膜的结构和光学性质
采用离散真空热蒸发(DVTE)技术,在空气气氛中对CdCl2进行处理和退火,得到了CdTe薄膜。利用能量色散x射线光谱、扫描电子显微镜、原子力显微镜、掠入射x射线衍射和拉曼分析等技术对CdTe样品进行了研究。实验结果表明,制备的CdTe薄膜具有立方结构,取向为111,表面光滑,无孔隙和裂纹,Cd/Te比值接近1。带隙宽度为1.51 eV,乌尔巴赫能在13 ~ 25 meV之间,以CdCl2合成的CdTe薄膜的带隙宽度增大。结果表明,在400℃的空气气氛中,经CdCl2处理和退火制备的CdTe薄膜以CdTe的立方结构为主结晶,具有良好的结构和形貌参数,低缺陷,最佳带隙值,可作为高效太阳能电池的前景材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信