Zelei Lai, Zhenyou Zou, Jinyu Ye, Yibin Lin, Xiongtu Zhou, Jie Sun, Tailiang Guo, Chaoxing Wu, Qun Yan, Lei Sun, Yongai Zhang
{"title":"Fabrication of uniform submicron metal bump arrays based on undercut sacrificial layer for lift-off process","authors":"Zelei Lai, Zhenyou Zou, Jinyu Ye, Yibin Lin, Xiongtu Zhou, Jie Sun, Tailiang Guo, Chaoxing Wu, Qun Yan, Lei Sun, Yongai Zhang","doi":"10.1007/s10854-025-14764-5","DOIUrl":null,"url":null,"abstract":"<div><p>The fabrication of uniform metal bump arrays with submicron-sized diameters is crucial for achieving Micro-LED displays with ultra-high pixel density. This study presents a fabrication strategy that utilizes an undercut sacrificial layer in the lift-off process to achieve fine-pitched metal bump arrays. The influences of sacrificial layer thickness and developing time on the undercut degree, as well as their effects on the morphology and dimensional consistency of bumps, are investigated. It is observed that increasing the developing time leads to a higher degree of undercut, not only facilitating the lift-off of the sacrificial layer but also resulting in an increased base radius of the metal bumps. By optimizing process parameters, we successfully achieved Au bump arrays with a base radius around 0.99 μm, top radius around 0.3 μm, and a pitch size of 1.4 μm, exhibiting height nonuniformity below 5%. This fabrication strategy for uniform metal bump arrays with ultra-high density will greatly contribute to advancing Micro-LED technology towards high definition and high brightness.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14764-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The fabrication of uniform metal bump arrays with submicron-sized diameters is crucial for achieving Micro-LED displays with ultra-high pixel density. This study presents a fabrication strategy that utilizes an undercut sacrificial layer in the lift-off process to achieve fine-pitched metal bump arrays. The influences of sacrificial layer thickness and developing time on the undercut degree, as well as their effects on the morphology and dimensional consistency of bumps, are investigated. It is observed that increasing the developing time leads to a higher degree of undercut, not only facilitating the lift-off of the sacrificial layer but also resulting in an increased base radius of the metal bumps. By optimizing process parameters, we successfully achieved Au bump arrays with a base radius around 0.99 μm, top radius around 0.3 μm, and a pitch size of 1.4 μm, exhibiting height nonuniformity below 5%. This fabrication strategy for uniform metal bump arrays with ultra-high density will greatly contribute to advancing Micro-LED technology towards high definition and high brightness.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.