Fabrication of uniform submicron metal bump arrays based on undercut sacrificial layer for lift-off process

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Zelei Lai, Zhenyou Zou, Jinyu Ye, Yibin Lin, Xiongtu Zhou, Jie Sun, Tailiang Guo, Chaoxing Wu, Qun Yan, Lei Sun, Yongai Zhang
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引用次数: 0

Abstract

The fabrication of uniform metal bump arrays with submicron-sized diameters is crucial for achieving Micro-LED displays with ultra-high pixel density. This study presents a fabrication strategy that utilizes an undercut sacrificial layer in the lift-off process to achieve fine-pitched metal bump arrays. The influences of sacrificial layer thickness and developing time on the undercut degree, as well as their effects on the morphology and dimensional consistency of bumps, are investigated. It is observed that increasing the developing time leads to a higher degree of undercut, not only facilitating the lift-off of the sacrificial layer but also resulting in an increased base radius of the metal bumps. By optimizing process parameters, we successfully achieved Au bump arrays with a base radius around 0.99 μm, top radius around 0.3 μm, and a pitch size of 1.4 μm, exhibiting height nonuniformity below 5%. This fabrication strategy for uniform metal bump arrays with ultra-high density will greatly contribute to advancing Micro-LED technology towards high definition and high brightness.

基于下切牺牲层的均匀亚微米金属碰撞阵列的制备
直径为亚微米的均匀金属碰撞阵列是实现超高像素密度微型led显示屏的关键。本研究提出了一种制造策略,在提升过程中利用下切牺牲层来实现细倾角金属碰撞阵列。研究了牺牲层厚度和显影时间对凹凸度的影响,以及对凹凸形貌和尺寸一致性的影响。研究发现,延长展开时间会导致更大程度的侧切,这不仅有利于牺牲层的剥离,而且会导致金属凸起的基底半径增大。通过优化工艺参数,我们成功地获得了基底半径约0.99 μm、顶部半径约0.3 μm、间距尺寸为1.4 μm的金凹凸阵列,高度不均匀性低于5%。这种超高密度均匀金属碰撞阵列的制造策略将极大地促进Micro-LED技术向高清晰度和高亮度方向发展。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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