{"title":"Improved densification, cubic phase stability and ionic conductivity of Ga/Mo co-doped Li7La3Zr2O12 electrolytes suppressed abnormal grain growth","authors":"Rui Mei, Feng Yan, Sizheng Hu, Zonggui Gong, Haoxuan Guo, Qijing Wang, Xinghua Zheng","doi":"10.1007/s10854-025-14749-4","DOIUrl":null,"url":null,"abstract":"<div><p>With the increasingly urgent safety requirement of lithium-ion batteries, more and more attention has been paid to Li<sub>7</sub>La<sub>3</sub>Zr<sub>2</sub>O<sub>12</sub> (LLZO)-based solid electrolytes with high ion conductivity and excellent electrochemical performance. Unfortunately, owing to the serious “Li-loss” and the abnormal grain growth (AGG) during the long-time high-temperature sintering process, it is difficult to achieve the high-quality LLZO electrolyte with uniform and fine grains, high density and excellent electrochemical performance. In this work, Ga/Mo co-doped LLZO solid-state electrolytes have been prepared by traditional sintering (TS) and two-step sintering (TSS). And the sintering mechanism, phase stability, microstructure evolution, and electrochemical performance have been systematically investigated. A small amount of Ga/Mo doping not only promotes the formation of the cubic garnet LLZO phase, but also enhances the stability of cubic phase. High density of 92.3% and uniform microstructure without AGG have been achieved via a small amount of Ga doping and TSS. Li<sub>6.3</sub>Ga<sub>0.1</sub>La<sub>3</sub>Zr<sub>1.8</sub>Mo<sub>0.2</sub>O<sub>12</sub> electrolytes, prepared by TSS of 1200 °C/15 min-1100 °C/8 h, exhibits high ion conductivity of 2.59 × 10<sup>–4</sup> S·cm<sup>−1</sup> and critical current density (CCD) value of 0.5 mA·cm<sup>−2</sup>, low electric conductivities of 4.77 × 10<sup>–9</sup> S·cm<sup>−1</sup>, which suggests it is a potential electrolyte to apply in all-solid-state batteries.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 12","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14749-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
With the increasingly urgent safety requirement of lithium-ion batteries, more and more attention has been paid to Li7La3Zr2O12 (LLZO)-based solid electrolytes with high ion conductivity and excellent electrochemical performance. Unfortunately, owing to the serious “Li-loss” and the abnormal grain growth (AGG) during the long-time high-temperature sintering process, it is difficult to achieve the high-quality LLZO electrolyte with uniform and fine grains, high density and excellent electrochemical performance. In this work, Ga/Mo co-doped LLZO solid-state electrolytes have been prepared by traditional sintering (TS) and two-step sintering (TSS). And the sintering mechanism, phase stability, microstructure evolution, and electrochemical performance have been systematically investigated. A small amount of Ga/Mo doping not only promotes the formation of the cubic garnet LLZO phase, but also enhances the stability of cubic phase. High density of 92.3% and uniform microstructure without AGG have been achieved via a small amount of Ga doping and TSS. Li6.3Ga0.1La3Zr1.8Mo0.2O12 electrolytes, prepared by TSS of 1200 °C/15 min-1100 °C/8 h, exhibits high ion conductivity of 2.59 × 10–4 S·cm−1 and critical current density (CCD) value of 0.5 mA·cm−2, low electric conductivities of 4.77 × 10–9 S·cm−1, which suggests it is a potential electrolyte to apply in all-solid-state batteries.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.