Ching-Tao Chang;Martha R. McCartney;David J. Smith;Keith E. Holbert;Esteban Chacon;Kiraneswar Muthuseenu;Hugh J. Barnaby
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引用次数: 0
Abstract
In this work, an analysis of total ionizing dose (TID) effects in metal-nitride–oxide-semiconductors (MNOSs) was performed using electrical characterization and electron holography. Technology computer-aided design (TCAD) simulations were also performed to reproduce the holography findings. By matching the simulation results with electron holography data and capacitance-voltage (CV) measurement results, the distributions of holes and electrons in the nitride and oxide film are extracted. Close matching between the experimental data and simulation results establishes that charge buildup within the dielectric layers after irradiation can be directly imaged and quantified. Electron and hole trapping in the nitride layer near the SiO2/Si3N4 interface, identified using the holography measurements, is also shown to be consistent with models presented in previous studies.
期刊介绍:
The IEEE Transactions on Nuclear Science is a publication of the IEEE Nuclear and Plasma Sciences Society. It is viewed as the primary source of technical information in many of the areas it covers. As judged by JCR impact factor, TNS consistently ranks in the top five journals in the category of Nuclear Science & Technology. It has one of the higher immediacy indices, indicating that the information it publishes is viewed as timely, and has a relatively long citation half-life, indicating that the published information also is viewed as valuable for a number of years.
The IEEE Transactions on Nuclear Science is published bimonthly. Its scope includes all aspects of the theory and application of nuclear science and engineering. It focuses on instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.