Experimental and simulation analyses of bulk GaN-based metal-semiconductor-metal ultraviolet photodetectors

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-04-22 DOI:10.1016/j.mseb.2025.118323

Momin S.M. Abutawahina , A.M. Alghareeb Abbas , N.A. Hamzah , S.S. Ng , H.J. Quah , Naser M. Ahmed , M. Shaveisi

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Abstract

This study presents a comprehensive experimental and simulation analysis of bulk c-plane gallium nitride (GaN)-based metal–semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs). The PDs were fabricated using a straightforward approach, with silver paste serving as the electrode material. The fabricated devices demonstrated excellent performance, achieving high responsivity (12.8 A/W), sensitivity (1864 %), photo-to-dark current gain (19.64), detectivity (1.11 × 10¹¹ J), low noise equivalent power (1.64 × 10^-12 W/cm²Hz^½), and fast response times (rise time: 0.1 s, decay time: 0.125 s) under 6 V bias at 365 nm illumination. To further understand the underlying physical mechanisms, a Silvaco TCAD ATLAS simulator was employed, revealing a trend consistent between the simulation results and experimental data. This agreement underscores the reliability and effectiveness of the fabricated GaN-based MSM UV PDs, highlighting their potential for high-performance UV detection applications.

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基于块状氮化镓的金属-半导体-金属紫外线光电探测器的实验和模拟分析

本研究对体c平面氮化镓（GaN）基金属-半导体-金属（MSM）紫外（UV）光电探测器（pd）进行了全面的实验和模拟分析。pd是用一种简单的方法制作的，以银浆作为电极材料。所制备的器件性能优异，在6v偏置、365 nm光照下，具有高响应度（12.8 A/W）、灵敏度（1864%）、光暗电流增益（19.64）、探测率（1.11 × 1011 J）、低噪声等效功率（1.64 × 10-12 W/cm2Hz½）和快速响应时间（上升时间0.1 s，衰减时间0.125 s）。为了进一步了解其潜在的物理机制，使用了Silvaco TCAD ATLAS模拟器，揭示了模拟结果与实验数据之间的一致趋势。该协议强调了制造的gan基MSM UV pd的可靠性和有效性，突出了它们在高性能UV检测应用中的潜力。

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.