Ga2Se3-based Ovonic Threshold Switching selector for high-density memory applications

IF 3.8 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum Pub Date : 2025-04-17 DOI:10.1016/j.vacuum.2025.114339

Haotian Wang , Xuli Cheng , Yuhao Wang , Yingtao Yang , Yuan Xue , Zhitang Song , Sannian Song , Lijun Tian , Wei Ren

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引用次数: 0

Abstract

The increasing demand for high-density and high-speed memory systems, driven by big data and artificial intelligence, presents significant challenges for current information storage architectures, particularly in 3D stacking technologies. Selector devices with low leakage current and high thermal stability remain a critical limitation. This study investigates Ga₂Se₃ as a simple binary Ovonic Threshold Switching (OTS) material through advanced fabrication, characterization, and first-principles simulations. Our key findings demonstrate that Ga₂Se₃ exhibits exceptional low leakage current (∼8 nA), thermal stability (up to 400 °C), excellent performance at dimensions as small as 60 nm, and fast switching speed (∼10 ns). These results, combined with insights into its electronic state localization and bonding characteristics, position Ga₂Se₃ as a promising candidate for next-generation high-density storage and computing technologies.

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基于ga2se3的Ovonic阈值开关选择器，用于高密度内存应用

在大数据和人工智能的推动下，对高密度和高速存储器系统的需求日益增长，这给当前的信息存储架构，尤其是三维堆叠技术带来了巨大挑战。具有低漏电流和高热稳定性的选择器器件仍然是一个关键的限制因素。本研究通过先进的制造、表征和第一原理模拟，研究了作为简单二元阈值开关（OTS）材料的 Ga2Se3。我们的主要研究结果表明，Ga2Se3 具有极低的漏电流（∼8 nA）、热稳定性（高达 400 °C）、在尺寸小至 60 nm 时的卓越性能和快速开关速度（∼10 ns）。这些结果以及对其电子态定位和键合特性的深入了解，使 Ga2Se3 成为下一代高密度存储和计算技术的理想候选材料。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Vacuum 工程技术-材料科学：综合

CiteScore

6.80

自引率

17.50%

发文量

审稿时长

34 days

期刊介绍： Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences. A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below. The scope of the journal includes: 1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes). 2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis. 3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification. 4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.