High-Performance Resistive Random-Access Memory Based on the 2D Cadmium Selenide Nanoplate-Organic Semiconductor Hybrid Structure

Abstract

Resistive random-access memory (RRAM) has emerged as a promising alternative to conventional memory components, offering nonvolatility, high density, low power consumption, and fast read/write speeds. This study investigates the integration of 2D cadmium selenide nanoplates (CdSe NPLs) into an organic semiconductor to enhance the RRAM performance. Utilizing poly(vinylcarbazole) (PVK) as the organic semiconductor, we systematically evaluate the impact of CdSe NPLs on memory properties. Our findings demonstrate that CdSe NPL integration enhances both charge entrapment and release, resulting in nonvolatile memory attributes and rewritability. The synergistic interplay between CdSe NPLs and the energy barrier of PVK defines distinct memory properties. Fabricated CdSe-PVK RRAM devices exhibit impressive performance characteristics, including a current ON/OFF ratio exceeding 10⁵, a retention time exceeding 10⁵ seconds, and an operational voltage below +3 V. These results surpass those reported in similar studies, highlighting the efficacy of integrating CdSe NPLs into RRAM materials. Overall, this study provides insights into the enhanced performance of RRAM through nanostructure integration, paving the way for further research in this promising area.