Investigating half-metallic Mn2TiSn Heusler alloy for advanced spintronics applications

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Rasik Ahmad Parray, Asmat Ara, K. Ravichandran
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引用次数: 0

Abstract

Multiferroic composites with high magnetic and electric properties at room temperature are considered the most significant materials due to their potential applications in many electronic devices. Furthermore, ultrafast, eco-friendly, energy-efficient innovative techniques to develop multifunctional materials have attracted abundant importance. In this study, we report on ferromagnetic particulate alloy prepared via a clean, eco-friendly, ultrafast, wet ball milling method followed by annealing at different temperatures. The multiferroic properties of the annealed samples were investigated via different characterizations. X-ray diffraction confirmed the identification of face-centered cubic with L21 arrangement. The calculated average crystallite size of prepared Mn2TiSn (900 °C/20 h.) Heusler alloy nanoparticles using Scherer’s formula were found to be 37 nm. A high-resolution electron microscope reveals the aggregated morphology with a particle size ranging from 80 to 120 nm. The temperature-dependent electrical resistivity and Seebeck coefficient were measured, suggesting that the alloy behaves like an n-type semiconductor. Such semiconducting behavior may be considered as an indication that Mn2TiSn full-Heusler alloy is a spin-gapless semiconductor. Vibrating sample magnetometer measurements suggest that the alloy has soft ferromagnetic properties with low coercivity and high saturation. This result may offer an alternative technique for preparing alloys with improved magnetic and electrical properties. Thus, this work suggests that the material is feasible for spintronic applications.

研究半金属Mn2TiSn Heusler合金在先进自旋电子学中的应用
在室温下具有高磁性和电性能的多铁复合材料由于其在许多电子器件中的潜在应用而被认为是最重要的材料。此外,超快、环保、节能的创新技术开发多功能材料已引起广泛重视。在这项研究中,我们报告了通过清洁,环保,超快,湿球磨方法制备铁磁颗粒合金,然后在不同温度下退火。通过不同的表征研究了退火后样品的多铁性。x射线衍射证实为L21排列的面心立方。制备的Mn2TiSn(900℃/20 h)的计算平均晶粒尺寸。采用舍勒公式的赫斯勒合金纳米颗粒直径为37纳米。高分辨率电子显微镜显示颗粒大小在80 ~ 120nm之间的聚集形态。测量了温度相关的电阻率和塞贝克系数,表明该合金的行为类似于n型半导体。这种半导体行为可以认为是Mn2TiSn全heusler合金是一种无自旋间隙半导体的标志。振动样品磁强计测量结果表明,该合金具有低矫顽力、高饱和度的软铁磁性能。这一结果可能为制备具有改进磁性和电学性能的合金提供一种替代技术。因此,这项工作表明,该材料是可行的自旋电子应用。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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