{"title":"First-principles study on gas sensing properties of two-dimensional SnSi2N4 monolayer","authors":"Shuaiqi Lv , Zhao Wang , Pengtao Wang","doi":"10.1016/j.surfin.2025.106453","DOIUrl":null,"url":null,"abstract":"<div><div>This study explores the gas sensing properties of SnSi<sub>2</sub>N<sub>4</sub> using density functional theory (DFT) and ab initio molecular dynamics (AIMD) simulations. The SnSi<sub>2</sub>N<sub>4</sub> monolayer exhibits dynamic stability and a direct band gap of 1.98 eV, making it suitable for semiconductor applications. Adsorption studies reveal strong interactions with NO<sub>2</sub> and NH<sub>3</sub>, with significant charge transfer. The work function of SnSi<sub>2</sub>N<sub>4</sub> varies notably upon gas adsorption, which is crucial for sensor performance. AIMD simulation shows that H<sub>2</sub>O moves away from the surface of SnSi<sub>2</sub>N<sub>4</sub> below 498 K, indicating its potential for gas sensing applications at higher humidity. This work reveals the potential of SnSi<sub>2</sub>N<sub>4</sub> as a high-performance gas sensor for NO<sub>2</sub> and NH<sub>3</sub>, providing ideas for the development of new two-dimensional gas sensors.</div></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":"65 ","pages":"Article 106453"},"PeriodicalIF":5.7000,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surfaces and Interfaces","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2468023025007102","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
This study explores the gas sensing properties of SnSi2N4 using density functional theory (DFT) and ab initio molecular dynamics (AIMD) simulations. The SnSi2N4 monolayer exhibits dynamic stability and a direct band gap of 1.98 eV, making it suitable for semiconductor applications. Adsorption studies reveal strong interactions with NO2 and NH3, with significant charge transfer. The work function of SnSi2N4 varies notably upon gas adsorption, which is crucial for sensor performance. AIMD simulation shows that H2O moves away from the surface of SnSi2N4 below 498 K, indicating its potential for gas sensing applications at higher humidity. This work reveals the potential of SnSi2N4 as a high-performance gas sensor for NO2 and NH3, providing ideas for the development of new two-dimensional gas sensors.
期刊介绍:
The aim of the journal is to provide a respectful outlet for ''sound science'' papers in all research areas on surfaces and interfaces. We define sound science papers as papers that describe new and well-executed research, but that do not necessarily provide brand new insights or are merely a description of research results.
Surfaces and Interfaces publishes research papers in all fields of surface science which may not always find the right home on first submission to our Elsevier sister journals (Applied Surface, Surface and Coatings Technology, Thin Solid Films)