Epitaxial La: HfO2 films deposited on (111)-oriented SrTiO3

IF 2.5 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Applied Physics A Pub Date : 2025-04-18 DOI:10.1007/s00339-025-08513-y

Mingkai Qing, Peijie Jiao, Hongying Chen, Zhiyu Liu, Yu Deng, Di Wu

引用次数: 0

Abstract

(111)-oriented 5%La: HfO₂ (HLO) thin films have been successfully deposited on La_0.67Sr_0.33MnO₃ buffered (111)-oriented SrTiO₃ (STO) substrates by pulsed laser deposition. The growth of the orthorhombic HLO films with a rhombohedral distortion follows a domain matching epitaxy mechanism and twin domains appear as revealed by atomic resolution scanning transmission electron microscopy. These (111)-oriented HLO films show 6-fold in-plane symmetry due to the twin domains rotated 180° to each other around the surface normal. The HLO films, 15 nm in thickness, on (111)-oriented STO exhibit robust ferroelectric properties with an optimized remanent polarization around 13 µC/cm² without any wake-up process.

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（111）取向SrTiO3表面沉积La: HfO2外延薄膜

采用脉冲激光沉积技术在La0.67Sr0.33MnO3缓冲的（111）取向SrTiO3 （STO）衬底上成功地制备了5%La: HfO2 （HLO）薄膜。具有菱形畸变的正交HLO薄膜的生长遵循域匹配外延机制，原子分辨扫描透射电子显微镜显示双畴的存在。这些（111）取向的HLO薄膜表现出6倍的面内对称性，这是由于双畴围绕表面法线相互旋转了180°。在（111）取向STO上，厚度为15 nm的HLO薄膜表现出强大的铁电性能，其优化的剩余极化约为13µC/cm2，没有任何唤醒过程。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics A 工程技术-材料科学：综合

CiteScore

4.80

自引率

7.40%

发文量

964

审稿时长

38 days

期刊介绍： Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.