Design and performance evaluation of low-voltage solid-state DCCB using capacitor-based surge mitigation techniques

Mehdi Moradian , Tek Tjing Lie , Kosala Gunawardane
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Abstract

This article conducts practical tests on four different configurations of solid-state DC circuit breakers (SS-DCCBs), investigating fault detection and circuit interruption phenomena in DC systems. It analyses circuit formulations and design principles, compares the topologies, and evaluates results. Since all circuit operation results are considered acceptable, the article scrutinizes circuit configurations and selects the most effective surge absorption technique based on active and passive components and surge mitigation complexity. The primary switch in the proposed models is a MOSFET, while the bypass switches are IGBT and Thyristor. The traditional surge absorption method using Metal Oxide Varistor (MOV) is contrasted with three topologies employing the capacitor current block technique (CBT). Practical testing and discussion of the effects of circuit inductance on switching speed and operation are also included. Real-world modeling incorporating inductance on both the line and load sides is utilized throughout all experiments to assess realistic outcomes. The optimal surge absorption configuration will be chosen based on its ability to meet various criteria, including efficient operation, rapid response, minimal complexity on both power and control sides, and the involvement of active and passive components. The tests were carried out on a system with a 48 V DC supply.

Abstract Image

使用基于电容的浪涌缓解技术的低压固态DCCB的设计和性能评估
本文对四种不同配置的固态直流断路器(SS-DCCBs)进行了实际测试,研究了直流系统中的故障检测和电路中断现象。它分析了电路配方和设计原理,比较了拓扑结构,并评估了结果。由于所有电路操作结果都被认为是可接受的,因此本文仔细检查了电路配置,并根据有源和无源元件以及浪涌缓解复杂性选择了最有效的浪涌吸收技术。所提出的模型中的主开关是一个MOSFET,而旁路开关是IGBT和晶闸管。将传统的利用金属氧化物压敏电阻(MOV)的浪涌吸收方法与采用电容电流块技术(CBT)的三种拓扑结构进行了对比。文中还对电路电感对开关速度和操作的影响进行了实际测试和讨论。在所有实验中都使用了包含线路和负载两侧电感的真实世界建模来评估实际结果。最佳的浪涌吸收配置将根据其满足各种标准的能力来选择,包括高效运行,快速响应,功率和控制方面的最小复杂性,以及主动和被动组件的参与。测试是在一个有48v直流电源的系统上进行的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Power electronic devices and components
Power electronic devices and components Hardware and Architecture, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality
CiteScore
2.00
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80 days
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