BaO/Se heterojunctions designed as effective light Absorbers, terahertz optical filters and microwave waveguides

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-04-18 DOI:10.1016/j.mseb.2025.118322

A.F. Qasrawi

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引用次数: 0

Abstract

Herein, hexagonal selenium microrods are deposited onto tetragonal barium oxide substrates by the thermal evaporation technique under a vacuum pressure of 10^-5 mbar. Optical studies indicated that BaO and Se exhibited band gaps of 3.55 eV and 2.33 eV, respectively. BaO/Se interfaces exhibited a valence and conduction band offsets of 0 eV and 1.22 eV, respectively. In addition, depositing Se layers onto BaO substrates, remarkably, enhanced the light absorption of Se by more than 100 % in the spectral range of 1.9–4.0 eV and by 1100 % at 3.0 eV. Moreover, the analyses of the dielectric, the optical conductivity and terahertz cutoff frequency showed the suitability of the BaO/Se heterojunctions for the fabrication of terahertz optical filters. Electrically, Au/BaO/Se/Au planner waveguides exhibited low pass filter and antenna characteristics that suits microwave technology in the gigahertz frequency domain. The features of the BaO/Se devices are promising for using them in electro-optical systems.

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BaO/Se异质结设计为有效的光吸收剂、太赫兹滤光器和微波波导

在10- 5mbar的真空压力下，通过热蒸发技术将六边形硒微棒沉积在四边形氧化钡衬底上。光学研究表明，BaO和Se的带隙分别为3.55 eV和2.33 eV。BaO/Se界面的价带和导带偏移分别为0 eV和1.22 eV。此外，在BaO衬底上沉积Se层，在1.9 ~ 4.0 eV的光谱范围内，Se的光吸收提高了100%以上，在3.0 eV的光谱范围内，Se的光吸收提高了1100%。此外，对BaO/Se异质结的介电介质、电导率和太赫兹截止频率的分析表明，BaO/Se异质结适合用于制作太赫兹滤光片。在电气方面，Au/BaO/Se/Au规划波导具有适合千兆赫频率域微波技术的低通滤波器和天线特性。BaO/Se器件的特性为其在电光系统中的应用提供了良好的前景。

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.