Optoelectronic characteristics of solution processed NiO/CdS/ITO photodetector for dual-wavelength detection

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-04-14 DOI:10.1016/j.sna.2025.116560

Ethar Yahya Salih , Shahad Imad Hasan , Enas Dhiyya SalahAlden , Mustafa K.A. Mohammed

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Abstract

Broad-band self-powered NiO/CdS/ITO photodetector was fabricated via solution processed framework. The structural and optical features of the deposited layers were systematically investigated in relation to their photo-responsive device analysis. In particular, the optical bandgap exhibited values of 3.48 and 2.45 eV corresponded to the deposited NiO and CdS layers, respectively. In conjunction, the attained photocurrent revealed a well-oriented wavelength dependency with values of 0.59 and 0.25 mA at incident wavelengths of 375 and 500 nm, respectively, around which lower trend was noticed. In the meanwhile, the proposed geometry demonstrated linear correlation (R² = ∼0.99) between the attained photocurrent along the applied illumination power with photo-responsivity values of 44.8 and 64.67 mA/W at 6 and 14 mW/cm², respectively. Finally, the time-resolved property exhibited response/recovery time-related features with values of 231/244 and 250/380 ms. at incident wavelengths of 375 and 500 nm, respectively. In addition to the robustness and reliability of the fabricated geometry, the presented device might represent an alternative framework for relatively straight-forward optoelectronic design.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...