{"title":"Dual SOT Switching Modes in a Single Device Geometry for Neuromorphic Computing","authors":"Abhijeet Ranjan, Tamkeen Farooq, Chong-Chi Chi, Hsin-Ya Sung, Rudis Ismael Salinas Padilla, Po-Hung Lin, Wen-Wei Wu, Ming-Yen Lu, Rahul Mishra, Chih-Huang Lai","doi":"10.1021/acs.nanolett.5c01100","DOIUrl":null,"url":null,"abstract":"Neuromorphic computing aims to replicate the brain’s efficient processing through artificial neurons and synapses, requiring binary and multilevel switching. We present a PtMn/(Co/Pd)<sub>4</sub>/Ta device that uniquely enables dual spin–orbit torque (SOT) switching modes─binary and multilevel (analog)─within the same geometry and stack structure, eliminating the need for device modifications. Binary SOT switching is achieved via domain wall nucleation and propagation at moderate current levels (∼65 mA), while multilevel switching occurs via domain nucleation mode without significant propagation after a high-current treatment (∼85 mA). The transition between two modes originates from structural changes after the current treatment. These modes allow for neuronal and synaptic functionalities, with the device achieving 96% accuracy in digit/letter recognition on the MNIST data set using an artificial neural network (ANN). The device’s robust perpendicular magnetic anisotropy (PMA), dual-mode switching under a small in-plane field (<i>H</i><sub>X</sub>), and simplified fabrication underscore its promise as an energy-efficient solution for neuromorphic computing.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 1","pages":""},"PeriodicalIF":9.6000,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Letters","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acs.nanolett.5c01100","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Neuromorphic computing aims to replicate the brain’s efficient processing through artificial neurons and synapses, requiring binary and multilevel switching. We present a PtMn/(Co/Pd)4/Ta device that uniquely enables dual spin–orbit torque (SOT) switching modes─binary and multilevel (analog)─within the same geometry and stack structure, eliminating the need for device modifications. Binary SOT switching is achieved via domain wall nucleation and propagation at moderate current levels (∼65 mA), while multilevel switching occurs via domain nucleation mode without significant propagation after a high-current treatment (∼85 mA). The transition between two modes originates from structural changes after the current treatment. These modes allow for neuronal and synaptic functionalities, with the device achieving 96% accuracy in digit/letter recognition on the MNIST data set using an artificial neural network (ANN). The device’s robust perpendicular magnetic anisotropy (PMA), dual-mode switching under a small in-plane field (HX), and simplified fabrication underscore its promise as an energy-efficient solution for neuromorphic computing.
期刊介绍:
Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including:
- Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale
- Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies
- Modeling and simulation of synthetic, assembly, and interaction processes
- Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance
- Applications of nanoscale materials in living and environmental systems
Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.