{"title":"A High Selectivity and Steep Attenuation Integrated Passive Device On-Chip Filter With Semi-Lumped π-Type Topology and Cross-Coupling Technique","authors":"Hao-Ran Zhu;Wen-Tao Wang;Lv-Bo Ma;Tao Ni","doi":"10.1109/LMWT.2025.3538697","DOIUrl":null,"url":null,"abstract":"In this letter, a high selectivity integrated passive device (IPD) on-chip bandpass filter with compact size is presented. The modified semi-lumped K inverter is utilized to generate two transmission zeros (TZs) at upper stopband. The semi-lumped <inline-formula> <tex-math>$\\pi $ </tex-math></inline-formula> type section is designed to achieve another two TZs at the lower stopband. Moreover, cross-coupling technology is also employed to introduce TZ, which can improve the frequency selectivity near the passband and the attenuation level at the stopband. A chip sample is fabricated with gallium arsenide processing with a size <inline-formula> <tex-math>$1.125\\times 0.565$ </tex-math></inline-formula> mm2. The measurement results show that the center frequency is 27 GHz, the fractional bandwidth is 39%, and the insertion loss (IL) is 1.73 dB.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 4","pages":"400-403"},"PeriodicalIF":0.0000,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10887237/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this letter, a high selectivity integrated passive device (IPD) on-chip bandpass filter with compact size is presented. The modified semi-lumped K inverter is utilized to generate two transmission zeros (TZs) at upper stopband. The semi-lumped $\pi $ type section is designed to achieve another two TZs at the lower stopband. Moreover, cross-coupling technology is also employed to introduce TZ, which can improve the frequency selectivity near the passband and the attenuation level at the stopband. A chip sample is fabricated with gallium arsenide processing with a size $1.125\times 0.565$ mm2. The measurement results show that the center frequency is 27 GHz, the fractional bandwidth is 39%, and the insertion loss (IL) is 1.73 dB.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
