A Dual-Mode CMOS VCO Using Hybridized Localized Surface Plasmon Resonator

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Shuyang Zhang;Guoqing Dong;Yizhu Shen;Sanming Hu
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引用次数: 0

Abstract

An on-chip mode-switchable hybridized localized surface plasmon resonator (HLSPR) is proposed to realize a dual-mode voltage-controlled oscillator (VCO). Different from conventional localized surface plasmon resonator (LSPR) with limited available modes, the proposed HLSPR offers rich intrinsic resonate modes, which can enlarge the tuning ranges or frequency bands of the VCO. A switch is applied to the slit of the HLSPR to electrically control resonate modes and frequencies. Moreover, capacitors paralleled to the HLSPR can naturally avoid mode ambiguity. The HLSPR-based dual-mode VCO is prototyped in a 180-nm CMOS process. By integrating HLSPR with active circuits, the K-band VCO achieves a phase noise (PN) of -109.5 dBc/Hz @ 1-MHz offset.
使用杂化局部表面等离子体谐振器的双模 CMOS VCO
为了实现双模压控振荡器(VCO),提出了一种片上可切换模式的杂化局域表面等离子体谐振器(HLSPR)。不同于传统的局域表面等离子体谐振器(LSPR)可用模式有限,本文提出的局域表面等离子体谐振器提供了丰富的本征谐振模式,可以扩大VCO的调谐范围或频段。在HLSPR的狭缝上加一个开关来控制谐振模式和频率。此外,与HLSPR并联的电容器可以自然地避免模式模糊。基于hlpr的双模VCO在180纳米CMOS工艺中进行了原型设计。通过将HLSPR与有源电路集成,k波段VCO在1 mhz偏移时实现了-109.5 dBc/Hz的相位噪声(PN)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
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