Vanadium doping facilitates in-situ low-temperature sintering of titanate

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-04-17 DOI:10.1016/j.mseb.2025.118328

Shuai Yue , Yao Jiang , Haonan Huang , Lu Huang , Xinxin Zheng , Cairong Jiang , Chami N.K. Patabendige , Jianjun Ma

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引用次数: 0

Abstract

Perovskite ABO₃ displays excellent properties due to its stable structure, which can be further enhanced by doping different elements at the A or B sites. In this study, vanadium was doped into titanate with the specific composition (La_0.3Sr_0.7)_0.88Ti_1-xV_xO_3-δ (LSTVO) (x = 0, 0.05, 0.10, and 0.15), which was synthesized using a liquid-phase combustion method. We investigated the phase structure, sintering characteristics, and conductivity of the materials. By introducing the A-site deficiency, the LSTVO demonstrated significantly low sintering temperatures and outstanding sinterability. Vanadium doping facilitated in-situ sintering to achieve a high density of up to 92 % at 1200 °C by forming a strontium vanadate molten phase. The conductivity of the (La_0.3Sr_0.7)_0.88Ti_0.95V_0.05O₃ sample ranged from 60.00 to 30.37 S cm⁻¹ between 300 and 800 °C. The proposed sintering mechanism indicates that adding vanadium and non-stoichiometry at the A-site is crucial for improving density and conductivity.

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钒的掺杂有利于钛酸盐原位低温烧结

ABO3钙钛矿结构稳定，可通过在A位或B位掺杂不同元素进一步增强其性能。本研究将钒掺杂到钛酸盐中，其特定组成为（La0.3Sr0.7）0.88Ti1-xVxO3-δ (LSTVO) (x = 0,0.05, 0.10, 0.15)，采用液相燃烧法合成。我们研究了材料的相结构、烧结特性和电导率。通过引入a位缺陷，LSTVO表现出明显的低烧结温度和优异的烧结性能。钒的掺杂通过形成钒酸锶熔融相，促进了原位烧结在1200°C下达到高达92%的高密度。在300 ~ 800℃范围内，（La0.3Sr0.7）0.88 ti0.95 v0.050 o3样品的电导率范围为60.00 ~ 30.37 S cm−1。所提出的烧结机制表明，在a位添加钒和非化学计量对提高密度和电导率至关重要。

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.