Monolithic integration of circuits in e-mode GaN HEMT technology

Abstract

This work presents a power transistor with monolithically integrated gate driver and auxiliary circuit in the same GaN-on-Si die. It presents the design, the characterization and validation tests in a PCB similarly to a final application for this device. The target application is for USB-C chargers and power supplies for data centers. The technology is 650 V pGaN with Schottky gate. Simulation from -40 to 150 °C are performed and also fabrication process variation analysis (SS, FF) compared to typical values (TT).