Mahdi Mortada , Proloy Taran Das , Ulrich Schmid , Michael Schneider
{"title":"High-resolution parametric characterization of snap-through behaviour in bistable PiezoMEMS membranes","authors":"Mahdi Mortada , Proloy Taran Das , Ulrich Schmid , Michael Schneider","doi":"10.1016/j.sna.2025.116548","DOIUrl":null,"url":null,"abstract":"<div><div>This study presents a novel parameter space representation of bistable PiezoMEMS (piezoelectric micro-electromechanical systems) devices characterized by fractal tongue-like patterns similar to Arnold tongues. The parameter space is measured by analysing the snap-through trajectory of a compressively pre-stressed bistable thin film aluminium nitride (AlN) based PiezoMEMS membrane. The snap-through initiation is achieved by applying parameterized electrical signals comprised of rectangular pulses, frequency range is swept from 60 to 120 kHz covering the first resonance mode and peak-to-peak voltage starting from 15 and reaching 72.5 V. Several measurements were performed for 2, 3, 4, 5 and 20 pulses. The results show how different key metrics depend on both frequency and amplitude, but also develop while increasing the number of excitation pulses. For 2 and 3 pulses, uncluttered and organized patterns emerge, which tend towards seemingly more chaotic configurations for higher numbers of pulses. Our work discusses four different metrics of behaviour: probability of permanent switching, number of snap-throughs, correlation relation of the velocity trajectories and the time needed for the first snap-through. Finally, a simple simulation of a Duffing equation is presented that showed highly comparable results, when stimulated for a high number of pulses, to that of the 20 electrical pulses measurements. We reached significant displacement values of 8 to <span><math><mrow><mn>10</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span> when moving from one ground state to another with membranes having a thickness of <span><math><mrow><mn>3</mn><mo>.</mo><mn>2</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span> and diameters ranging from 600 to <span><math><mrow><mn>800</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span>. These features make those bistable devices great candidates for PiezoMEMS actuators like ultrasonic emitters.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"389 ","pages":"Article 116548"},"PeriodicalIF":4.1000,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424725003541","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This study presents a novel parameter space representation of bistable PiezoMEMS (piezoelectric micro-electromechanical systems) devices characterized by fractal tongue-like patterns similar to Arnold tongues. The parameter space is measured by analysing the snap-through trajectory of a compressively pre-stressed bistable thin film aluminium nitride (AlN) based PiezoMEMS membrane. The snap-through initiation is achieved by applying parameterized electrical signals comprised of rectangular pulses, frequency range is swept from 60 to 120 kHz covering the first resonance mode and peak-to-peak voltage starting from 15 and reaching 72.5 V. Several measurements were performed for 2, 3, 4, 5 and 20 pulses. The results show how different key metrics depend on both frequency and amplitude, but also develop while increasing the number of excitation pulses. For 2 and 3 pulses, uncluttered and organized patterns emerge, which tend towards seemingly more chaotic configurations for higher numbers of pulses. Our work discusses four different metrics of behaviour: probability of permanent switching, number of snap-throughs, correlation relation of the velocity trajectories and the time needed for the first snap-through. Finally, a simple simulation of a Duffing equation is presented that showed highly comparable results, when stimulated for a high number of pulses, to that of the 20 electrical pulses measurements. We reached significant displacement values of 8 to when moving from one ground state to another with membranes having a thickness of and diameters ranging from 600 to . These features make those bistable devices great candidates for PiezoMEMS actuators like ultrasonic emitters.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...