The deep ultraviolet detector based on BN/Au and BN/Al interfaces

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-04-15 DOI:10.1016/j.sna.2025.116590

Jiandong Hao , Ling Li , Tingwei Yan , Jinchang Meng , Zhenxing Liu

{"title":"The deep ultraviolet detector based on BN/Au and BN/Al interfaces","authors":"Jiandong Hao , Ling Li , Tingwei Yan , Jinchang Meng , Zhenxing Liu","doi":"10.1016/j.sna.2025.116590","DOIUrl":null,"url":null,"abstract":"<div><div>Boron nitride (BN) is suitable for ultraviolet (UV) photodetection with its wide bandgap and high absorption coefficient. The research on fabrication process and performance optimization is urgent with the development of UV detection technology. In this work, the band structure, work function, charge distribution and transfer, and optical absorption coefficients of BN/Au and BN/Al interfaces are calculated based on the density functional theory. The results show that the BN monolayer gets more charges with the influence of Au. The charge transfer is 0.025e and 0.015e for BN/Au and BN/Al. The absorption coefficients of BN/Au is higher than that of BN/Al in the DUV region, which enhances the light absorption of BN. In addition, BN/Au and BN/Al DUV detector is fabricated by dry transfer method. The highest photo-dark current ratio (PDCR) of 115.04 and 29.09 are obtained for BN/Au and BN/Al at an optical power density of 1.21 mW/cm<sup>2</sup> (<em>V</em><sub>bias</sub>=10 V). The responsivity (R) and detectivity (D*) is up to 0.70μA/W and 1.55 × 10<sup>8</sup>Jones for the BN/Au. The rise and fall times (T<sub>r</sub>/T<sub>f</sub>) are 0.12 s and 0.11 s, respectively. The DUV detector is fabricated with easy process, low cost and fast response. This provides theoretical support and technical reference for the next generation of high-performance devices.</div></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":"389 ","pages":"Article 116590"},"PeriodicalIF":4.1000,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424725003966","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Boron nitride (BN) is suitable for ultraviolet (UV) photodetection with its wide bandgap and high absorption coefficient. The research on fabrication process and performance optimization is urgent with the development of UV detection technology. In this work, the band structure, work function, charge distribution and transfer, and optical absorption coefficients of BN/Au and BN/Al interfaces are calculated based on the density functional theory. The results show that the BN monolayer gets more charges with the influence of Au. The charge transfer is 0.025e and 0.015e for BN/Au and BN/Al. The absorption coefficients of BN/Au is higher than that of BN/Al in the DUV region, which enhances the light absorption of BN. In addition, BN/Au and BN/Al DUV detector is fabricated by dry transfer method. The highest photo-dark current ratio (PDCR) of 115.04 and 29.09 are obtained for BN/Au and BN/Al at an optical power density of 1.21 mW/cm² (V_bias=10 V). The responsivity (R) and detectivity (D*) is up to 0.70μA/W and 1.55 × 10⁸Jones for the BN/Au. The rise and fall times (T_r/T_f) are 0.12 s and 0.11 s, respectively. The DUV detector is fabricated with easy process, low cost and fast response. This provides theoretical support and technical reference for the next generation of high-performance devices.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...