Zhong-guo Li, Wenfa Zhou, Zenghua Wang, Datang Xu, Xifeng Yang, Xuekun Hong, Yinglin Song
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引用次数: 0
Abstract
We report a detailed characterization of the wavelength dependency of two-photon absorption coefficient β and Kerr nonlinearity n2 in aluminum nitride (AlN) single crystal over a spectral range from 350 to 1030 nm (0.19 < Ephoto/Eg < 0.57). Femtosecond Z-scan results show that the dispersion of β compares favorably with the theoretical prediction at wavelengths shorter than 400 nm (half of bandgap Eg). However, the nonlinear refractive index n2 demonstrated a substantial deviation from theoretical calculations in the 350–450 nm regime, which is correlated with the sub-bandgap absorption band observed in AlN single crystal. The effects of trapped carrier-induced absorption and refraction were determined by femtosecond pump–probe measurements, which could be attributed to the transition from valence band maximum to mid-gap defect states in AlN. Our results provide guidance for developing AlN-based nonlinear integrated photonic devices in the UV–visible spectral range.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
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